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DiodesZetex NPN Transistor 1 A 60 V Surface Mount 3-Pin SOT-323 DSS4160U-7

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DiodesZetex NPN Transistor 1 A 60 V Surface Mount 3-Pin SOT-323 DSS4160U-7

Name: DiodesZetex NPN Transistor 1 A 60 V Surface Mount 3-Pin SOT-323 DSS4160U-7
Brand: DiodesZetex
SKU: 292319
Price: 0.1 USD
Availability: InStock

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Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin	China
Brand	DiodesZetex
Height	1.1mm
Length	2.2mm
Model	DSS4160U-7
Width	1.35mm
Mount Type	Surface
Series	DSS4160U
Maximum Operating Temperature	150°C
Package Type	SOT-323
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	60V
Minimum DC Current Gain hFE	200
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	80V
Maximum Power Dissipation Pd	400mW
Maximum DC Collector Current Idc	1A
Transistor Configuration	Single

Key Features

Maximum DC collector current is 1 A ensuring moderate power handling.
Collector emitter voltage rating of 60 V suitable for low to medium voltage applications.
Compact SOT-323 package for surface mounting on PCBs.
Minimum DC current gain (hFE) of 200 guarantees sufficient amplification.
Maximum power dissipation rated at 400 mW for heat management.
Operating temperature range from -55°C to 150°C for harsh environments.
Configuration is a single NPN transistor providing standard switching and amplification capabilities.
Suitable for electronic, power, and discrete semiconductor applications.

Product Description

DiodesZetex DSS4160U-7 is a general-purpose bipolar NPN transistor designed for electronic component applications. Featuring a maximum DC collector current of 1 A and a collector emitter voltage of 60 V, this transistor supports moderate power and voltage requirements typical of switching and amplification circuits.

Packaged in a 3-pin SOT-323 surface mount type, the compact form factor allows efficient PCB space usage, ideal for dense electronic assemblies. The transistor's minimum DC current gain (hFE) of 200 ensures dependable amplification performance, suitable for various semi-conductor circuits.

With a maximum power dissipation of 400 mW and capable of operating across a wide temperature range from -55°C to 150°C, the DSS4160U-7 offers reliable function in demanding environments including industrial and automotive applications.

The device has a maximum collector base voltage of 80 V and a maximum emitter base voltage of 5 V, ensuring robustness for common biasing conditions. Dimensions of 2.2 mm length, 1.35 mm width, and 1.1 mm height meet compact electronic design requirements.

Maximum DC collector current of 1 A enables medium current switching. Collector emitter voltage of 60 V supports low-to-medium voltage circuits. High current gain (hFE) of minimum 200 ensures efficient signal amplification.

Low power dissipation of 400 mW for thermal safety. Wide operating temperature range (-55°C to 150°C) for industrial reliability. Compact SOT-323 package suitable for surface mount technology PCBs. NPN transistor configuration for standard electronic uses.

Small size dimensions suitable for dense PCB layouts.

This transistor serves well in electronic components assemblies, power control, and discrete semiconductor circuits. It is engineered for consistent performance in industrial, commercial, and automotive sectors.

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