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Infineon NOR 512 MB SPI Flash Memory 24-Pin BGA, Surface Mount, 133MHz, 1.8-2V, AEC-Q100 Semper Series S25HS512TDPBHI010
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 950μm |
| Length | 8mm |
| Cell Type | NOR |
| Model | S25HS512TDPBHI010 |
| Width | 6mm |
| Mount Type | Surface |
| Series | Semper |
| Maximum Operating Temperature | 85°C |
| Certificates | ISO 26262 ASIL B Compliant |
| Package Type | BGA |
| Minimum Operating Temperature | -40°C |
| Memory size | 512MB |
| Interface Type | SPI |
| Pin Count | 24 |
| Automotive Standard | AEC-Q100 |
| Maximum Supply Voltage | 1.8V |
| Minimum Supply Voltage | 2V |
| Maximum Clock Frequency | 133MHz |
| Organisation | 64M x 8 Bit |
| Number of Bits per Word | 8 |
| Maximum Random Access Time | 8ns |
| Timing Type | Asynchronous |
| EnduraFlex™ Architecture | Partition memory to provide up to 25-years data retention and 1+ million program/erase cycles endurance |
Key Features
- 512 MB memory size with 64M x 8 bit organization.
- Operates at a maximum clock frequency of 133 MHz.
- Uses NOR cell technology supporting asynchronous timing.
- Supports EnduraFlex™ architecture for over 25 years data retention and 1+ million program/erase cycles.
- Complies with AEC-Q100 automotive standard.
- Surface mount package type with 24 BGA pins.
- Functions within temperature range from -40°C to 85°C.
- Maximum supply voltage of 1.8 V and minimum supply voltage of 2 V.
Product Description
Infineon S25HS512TDPBHI010 is a NOR flash memory with 512 MB capacity, featuring SPI interface technology and a compact 24-pin BGA surface mount package. It is designed to meet automotive and industrial requirements, including applications such as automotive instrument clusters and advanced driver assistance systems (ADAS).
The device operates at a maximum clock frequency of 133 MHz and has an asynchronous timing type. Its architecture includes EnduraFlex™, which enables partitioning of memory to provide extended data retention of over 25 years and endurance exceeding one million program/erase cycles, ensuring reliability in demanding environments.
The memory is compliant with the AEC-Q100 automotive standard and certified to ISO 26262 ASIL B, emphasizing its suitability for safety-critical automotive systems. It supports single error correction and double error detection (SECDED) along with data integrity checks and interface CRC for robust operation.
With an operating temperature range of -40°C to 85°C, this flash memory supports reliable functioning across a wide thermal range. Its surface mount packaging with 24 BGA pins enables efficient PCB space utilization, suitable for compact electronic designs.
512 MB NOR flash memory with SPI interface. EnduraFlex™ architecture for long data retention and high endurance. Compliance with automotive safety standards AEC-Q100 and ISO 26262 ASIL B. Supports SECDED and data integrity checks.
Compact 24-pin BGA surface mount package. Operates at 133 MHz maximum clock frequency. Wide temperature range operation from -40°C to 85°C. Maximum supply voltage of 1.8 V and minimum of 2 V. Suitable for automotive instrument clusters and ADAS applications.
This flash memory is ideally suited for industrial, automotive, and networking communication applications requiring reliable and safe non-volatile storage solutions. Explore similar semiconductor and Flash Memory products on EnvMart for your electronics design needs.
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Frequently Asked Questions
It has a memory capacity of 512 MB, organized as 64M x 8 bits.
The maximum clock frequency is 133 MHz.
It operates within a temperature range of -40°C to 85°C.
This model uses an SPI interface for communication.
The package dimensions are 8 mm in length, 6 mm in width, and 950 μm in height.
It complies with the AEC-Q100 automotive standard and is certified to ISO 26262 ASIL B.
The minimum supply voltage is 2 V and the maximum supply voltage is 1.8 V.
It utilizes asynchronous timing for operation.
EnduraFlex™ architecture allows for partitioning of memory, providing over 25 years of data retention and endurance exceeding one million program/erase cycles.
The maximum random access time is 8 ns.
It is suitable for automotive instrument clusters and advanced driver assistance systems (ADAS).
This memory uses NOR cell technology.
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