Infineon SRAM Memory 1MB 128K x 8 bit Asynchronous 3V Through Hole SOJ Package CY7C1018DV33-10VXIT

Infineon CY7C1018DV33-10VXIT SRAM Memory chip is a 1MB semiconductor component designed for high-speed, reliable data storage in industrial and electronic applications. Operating asynchronously with a maximum random access time of 10 ns, it allows quick and flexible data access without the need for timing clocks.

Featuring an organisation of 128K words by 8 bits each, this device supports a minimum supply voltage of 3V and a maximum of 3.6V, ensuring stable performance across varying power conditions. The chip is mounted using a Through Hole method with a 32-pin SOJ package, making it suitable for robust PCB assembly and extended operational durability.

Its operating temperature range is wide, from -40°C up to 85°C, making it ideal for demanding environments including industrial electronics, telecommunications equipment, and control systems.

The chip is RoHS compliant, ensuring it meets environmental standards by reducing hazardous substances during manufacturing. Memory size of 1MB with 128K x 8 bit organisation provides efficient data storage. Asynchronous timing ensures flexible and clock-independent operation.

Stable supply voltage range from 3V to 3.6V for optimal performance. Through Hole SOJ package with 32 pins for reliable circuit integration. Wide operating temperature of -40°C to 85°C suitable for industrial use. High speed access with 10 ns maximum random access time.

RoHS compliance assures eco-friendly and safe usage. Compact package dimensions facilitate space-saving board design.

This SRAM Memory chip is well-suited for semiconductor manufacturing, electronic design, and embedded systems development. Its features support applications in power and connectors, electronic components, semiconductor memory chips, and high-speed data systems.

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