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Vishay Silicon Junction Standard Recovery Power Diode Single 6 A 800 V 2-Pin P600 GI758-E3/54

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Vishay Silicon Junction Standard Recovery Power Diode Single 6 A 800 V 2-Pin P600 GI758-E3/54

Name: Vishay Silicon Junction Standard Recovery Power Diode Single 6 A 800 V 2-Pin P600 GI758-E3/54
Brand: Vishay
SKU: 246353
Price: 0.91 USD
Availability: InStock

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Category Diode Brand Vishay Condition New

Specifications

Country of Origin	China
Diameter	9.1mm
Brand	Vishay
Height	9.1mm
Length	9.1mm
Model	GI758-E3/54
Width	9.1mm
Mount Type	Through Hole
Maximum Operating Temperature	150°C
Package Type	P600
Sub Type	Silicon Junction
Minimum Operating Temperature	-50°C
Pin Count	2
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	400A
Maximum Forward Voltage Vf	1.3V
Peak Reverse Recovery Time trr	2.5μs
Maximum Forward Current If	6A
Maximum Peak Reverse Repetitive Voltage Vrrm	800V

Key Features

This diode features a maximum forward current of 6 amperes.
It has a peak reverse repetitive voltage of 800 volts, suitable for high voltage use.
The package type is P600 with a through-hole mount design for easy PCB installation.
It has a fast peak reverse recovery time of 2.5 microseconds, improving switching efficiency.
The device supports a peak non-repetitive forward surge current of 400 amperes.
It operates reliably within a temperature range from -50°C to 150°C.
The diode has a maximum forward voltage drop of 1.3 volts, optimizing power efficiency.
The product is manufactured in China and meets standard industrial quality without any specific certifications.

Product Description

Vishay GI758-E3/54 is a versatile silicon junction diode designed as a standard recovery rectifier, ideal for industrial, electronics manufacturing, power management, and switching applications. It offers a reliable maximum forward current of 6 A and can handle peak reverse voltages up to 800 V, making it fit for demanding power electronics circuits.

Its through-hole P600 package facilitates straightforward PCB mounting while maintaining compact dimensions of 9.1 mm in height, length, width, and diameter, suiting space-constrained designs. The diode boasts a peak reverse recovery time of just 2.5 microseconds, which aids in efficient switching performance and reduced losses.

Engineered to endure a wide temperature range from -50°C to 150°C, this diode ensures dependable operation in harsh environmental and industrial conditions. It permits a peak non-repetitive forward surge current of 400 A, offering resilience against transient overloads.

Typical electrical parameters such as a maximum forward voltage of 1.3 V help maintain energy-efficient operation, while the silicon junction design ensures stability and longevity. This diode is produced by Vishay in China, meeting the quality expected in discrete semiconductor components.

Applications include industrial power supplies, electronic components manufacturing, and general purpose switching diode roles in power circuits. The 2-pin configuration supports standard connection schemes in electrical assemblies.

This diode supports a max forward current of 6 A. Rated for peak reverse repetitive voltage of 800 V. Through-hole P600 package ensures reliable mounting. Peak reverse recovery time is 2.5 μs aiding quick switching. Operates across temperature range from -50°C to 150°C.

Maximum forward voltage drop of 1.3 V for efficiency. Compact 9.1 mm dimensions in all directions. Peak non-repetitive forward surge current rated at 400 A. Manufactured in China with standard industrial quality.

For reliability and performance in electronic component design and industrial assembly, the Vishay GI758-E3/54 silicon junction diode delivers precise and efficient power rectification. Explore more Vishay switching Diodes in our Electronics & Electricals category for your specialized semiconductor needs.