ROHM Half Bridge N-Channel Silicon-Carbide (SiC) Power Module, 240A, 1200V, Enhancement Mode, Surface Mount BSM120D12P2C005

ROHM BSM120D12P2C005 is a high-performance Half Bridge N-Channel Silicon-Carbide (SiC) Power Module designed for industrial power electronics applications requiring high current and voltage ratings. This surface mount module features a half-bridge configuration consisting of SiC DMOS power FET devices integrated with Schottky Barrier Diodes for enhanced switching efficiency and reduced conduction loss.

The device supports a maximum continuous drain current of 240 A and a maximum drain-source voltage of 1200 V, making it suitable for demanding power switching and conversion tasks in industrial, automotive electronics, motor control, and power supply systems.

Engineered to operate efficiently in extreme environments, the module maintains functionality across a broad temperature range from -40°C to 150°C. The maximum gate-source voltage tolerance of 22 V and a power dissipation capacity of 935 W contribute to its robust performance.

Its 4-pin surface mount package, with compact dimensions of 122 mm length, 45.6 mm width, and 17 mm height, facilitates straightforward PCB integration and effective thermal management. The half-bridge transistor layout enables implementation in power conversion circuits requiring high-speed switching and low losses.

Key technical features include low surge current capability and minimal switching power loss, which together enhance system efficiency and longevity. This module is compliant with standard industry operating conditions but carries no additional formal approvals or automotive certifications.

Features a half-bridge transistor configuration optimized for high-speed switching. Supports a maximum continuous drain current of 240 amperes. Operates with a maximum gate-source voltage of 22 V and maximum power dissipation of 935 W.

Surface mount design with 4-pin configuration for PCB integration. Wide operating temperature range from -40°C to 150°C ensuring reliability in harsh conditions. Low surge current and low switching losses improve efficiency.

Compact dimensions support space-efficient designs. Silicon-Carbide technology enables high voltage and temperature tolerance.

This ROHM SiC Power Module is ideal for industrial, manufacturing, automotive, and laboratory power management systems requiring reliable high current and voltage handling with low losses. Explore EnvMart’s wide selection of power semiconductor modules and electronic components to find complementary products for your engineering needs.