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Infineon Evaluation Board for EiceDRIVER for 1ED3251MC12H for IGBTs, SiC MOSFETs EVAL1ED3251MC12HTOBO1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | EVAL1ED3251MC12HTOBO1 |
| For Use With | IGBTs, SiC MOSFETs |
| Standards/Approvals | RoHS |
| Kit Classification | Evaluation Board |
| Featured Device | 1ED3251MC12H |
| Kit Name | Evaluation Board for EiceDRIVER |
Key Features
- The board features a half-bridge configuration with two-level slew-rate control enabled gate driver ICs.
- Equipped with an active miller clamp for enhanced switching performance.
- Typical sinking and sourcing peak output current of 8 A.
- Supports an absolute maximum output supply voltage of 40 V.
- Maximum propagation delay of 110 ns with a typical 35 ns input filter.
- High common-mode transient immunity (CMTI) greater than 200 kV per microsecond.
- Provides short-circuit clamping and active shutdown for protection.
Product Description
Infineon EVAL1ED3251MC12HTOBO1 evaluation board is designed to facilitate the evaluation of the slew-rate control switching scheme using the 1ED3251MC12H gate driver IC, optimized for use with IGBTs and SiC MOSFETs. This board features a half-bridge configuration with two-level slew-rate control enabled gate driver ICs and includes an active miller clamp for improved switching suppression.
The board supports a typical sinking and sourcing peak output current of 8 A and an absolute maximum output supply voltage rating of 40 V, ensuring robust performance for power and motor control applications. Its maximum propagation delay measures at 110 ns, coupled with a typical input filter delay of 35 ns, enabling precise control signals.
Enhanced with a high common-mode transient immunity (CMTI) exceeding 200 kV/μs, the board provides reliable operation in demanding environments. It also incorporates short-circuit clamping and an active shutdown feature to protect connected devices and ensure safe operation.
This evaluation board is suitable for testing and development in industrial, automotive, and power electronics applications, providing engineers with a reliable tool for assessing the performance of the 1ED3251MC12H gate driver IC with various switch types, including the recommended TRENCHSTOP™ IGBT IKQ75N120CT2.
The board features a half-bridge configuration with two-level slew-rate control enabled gate driver ICs. Equipped with an active miller clamp for enhanced switching performance. Typical sinking and sourcing peak output current of 8 A.
Supports an absolute maximum output supply voltage of 40 V. Maximum propagation delay of 110 ns with a typical 35 ns input filter. High common-mode transient immunity (CMTI) greater than 200 kV per microsecond. Provides short-circuit clamping and active shutdown for protection.
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Frequently Asked Questions
The evaluation board supports an absolute maximum output supply voltage of 40 V.
It has a typical sinking and sourcing peak output current of 8 A.
This board is designed for use with IGBTs and SiC MOSFETs.
The maximum propagation delay is 110 ns, with a typical input filter delay of 35 ns.
It includes an active miller clamp and two-level slew-rate control enabled gate driver ICs for improved switching performance.
The board has a high common-mode transient immunity (CMTI) greater than 200 kV per microsecond.
It provides short-circuit clamping and an active shutdown feature for protection.
The country of origin for this evaluation board is India.
It complies with RoHS standards.
This product is classified as an evaluation board.
It is suitable for testing and development in industrial, automotive, and power electronics applications.
The featured device for this evaluation board is the 1ED3251MC12H gate driver IC.
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