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Sharp PT481E00000F 26 ° Infrared Phototransistor Through Hole 2-Pin Side Looker Package PT481E00000F
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 0.8mm |
| Brand | Sharp |
| Height | 4mm |
| Length | 3mm |
| Model | PT481E00000F |
| Width | 2.95mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 85°C |
| Package Type | Side Looker |
| Minimum Operating Temperature | -25°C |
| Number Of Channels | 1 |
| Standards/Approvals | RoHS |
| Number of Pins | 2 |
| Typical Rise Time | 80μs |
| Typical Fall Time | 70μs |
| Peak Wavelength | 800nm |
| Spectrums Detected | Infrared |
| Angle of Half Sensitivity | 26 ° |
| Collector Current | 50mA |
| Maximum Light Current | 25000μA |
| Maximum Dark Current | 1000nA |
| Collector Emitter Voltage | 35V |
| Emitter Collector Voltage | 6V |
| PT481 Sharp, 26 ° IR Phototransistor, Through Hole 2-PinBrand | Sharp |
Key Features
- The phototransistor operates in the infrared spectrum.
- It provides a typical fall time of 70 microseconds and rise time of 80 microseconds.
- The device supports a maximum light current of 25,000 microamperes and a dark current of 1000 nanoamperes.
- The package is side looker type with a clear epoxy resin and domed lens.
- This phototransistor supports operating temperatures from -25°C to 85°C.
- The maximum collector current is 50 mA with a collector-emitter voltage of 35 V.
- It includes two pins for through-hole mounting with a compact size of approximately 4 mm height and 2.95 mm width.
- The model is RoHS compliant, ensuring compliance with environmental standards.
Product Description
Sharp PT481E00000F is a high-performance infrared phototransistor designed for precise light detection in industrial, electronics, and sensor applications. It features a 26 ° narrow acceptance angle and is housed in a side looker epoxy resin package with a domed lens that enhances detection accuracy and sensitivity.
This phototransistor detects infrared spectrums with a peak wavelength of 800 nm. It exhibits fast response times with a typical fall time of 70 microseconds and a rise time of 80 microseconds. The device supports a maximum light current of 25,000 microamperes and a minimal maximum dark current of 1000 nanoamperes, ensuring high sensitivity and low noise.
The PT481E00000F is engineered for through-hole mounting with a 2-pin configuration and offers robust electrical characteristics including a maximum collector current of 50 mA and a collector-emitter voltage rating of 35 V. Its operating temperature range spans from -25°C to 85°C, suitable for diverse environmental conditions.
The compact form factor, measuring approximately 4 mm in height, 3 mm in length, and 2.95 mm wide with a 0.8 mm diameter lens area, makes it ideal for integration into compact circuit designs. The clear plastic package ensures visibility and performance consistent with infrared illumination requirements.
RoHS compliance confirms the environmentally safe manufacture of this phototransistor, making it suitable for industrial electronics, sensor modules, and optocoupler applications in manufacturing, automation, and control systems.
The phototransistor operates in the infrared spectrum. Features typical rise and fall times for rapid switching. Compact side looker epoxy resin package with domed lens. Through-hole 2-pin mounting for easy PCB integration.
Wide operating temperature range from -25°C to 85°C. Electrical ratings suitable for sensor and optoelectronic designs. RoHS compliant for environmentally responsible applications. Explore our electronics components category for more Phototransistors and sensor solutions designed to meet demanding industrial and electronics applications.
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Frequently Asked Questions
The peak wavelength of this phototransistor is 800 nm, allowing it to effectively detect infrared light.
The typical rise time is 80 microseconds, and the typical fall time is 70 microseconds, enabling rapid response in applications.
The maximum collector current for this phototransistor is 50 mA, which defines its operational limits.
It operates within a temperature range of -25°C to 85°C, making it suitable for various environmental conditions.
This model supports through-hole mounting with a 2-pin configuration, facilitating easy integration into PCB designs.
The dimensions are approximately 4 mm in height, 3 mm in length, and 2.95 mm in width, with a lens diameter of 0.8 mm.
The maximum light current supported by the PT481E00000F is 25,000 microamperes, ensuring high sensitivity.
Yes, this phototransistor is RoHS compliant, confirming its adherence to environmental standards.
The angle of half sensitivity for the PT481E00000F is 26°, which affects its detection capabilities.
It comes in a side looker package made of clear epoxy resin, which enhances its detection accuracy.
The maximum collector-emitter voltage rating is 35 V, which is crucial for its electrical performance.
This phototransistor is suitable for industrial electronics, sensor modules, and optocoupler applications in automation and control systems.
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