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ams OSRAM Infrared Phototransistor Through Hole 2-Pin 5 mm T-1 3/4 Package SFH 313 FA-2/3

Category Phototransistor Brand ams OSRAM Condition New

Specifications

Country of Origin India
Diameter 5.1mm
Brand ams OSRAM
Height 9mm
Length 5.9mm
Model SFH 313 FA-2/3
Width 5.9mm
Mount Type Through Hole
Series SFH 313 FA
Maximum Operating Temperature 100°C
Package Type 5 mm (T-1 3/4)
Minimum Operating Temperature -40°C
Number Of Channels 1
Standards/Approvals RoHS
Number of Pins 2
Typical Fall Time 14μs
Peak Wavelength 870nm
Spectrums Detected Infrared
Angle of Half Sensitivity 20 °
Collector Current 50mA
Maximum Light Current 12500μA
Maximum Dark Current 200nA
Collector Emitter Voltage 70V
Emitter Collector Voltage 7V
IR T-1 Phototransistor 20°,SFH313FA-2Brand OSRAM Opto Semiconductors

Key Features

  • This phototransistor operates with a peak wavelength of 870nm suitable for IR applications.
  • It features a typical rise and fall time of 14 microseconds for responsive switching.
  • The device supports a maximum collector current of 50mA ensuring reliable signal amplification.
  • Designed with a 20° angle of half sensitivity for accurate light detection directionality.
  • Temperature operating range from -40°C to 100°C enables versatile industrial use.
  • Compact 5 mm diameter package suitable for through-hole mounting on PCBs.
  • Compliant with RoHS standards, ensuring environmental safety.
  • Ideal for use in photointerrupters, computer-controlled flashes, and industrial control circuits.

Product Description

ams OSRAM SFH 313 FA-2/3 is an infrared phototransistor packaged in a robust through hole 2-pin 5 mm (T-1 3/4) format, engineered for electronic components applications requiring precise detection of infrared light. Featuring a peak sensitivity wavelength of 870nm, this device ensures dependable performance in a range of photodetection environments.

The phototransistor exhibits fast response times with typical rise and fall times of 14 microseconds, allowing for quick switching necessary in high-speed electronic circuits. It supports a maximum collector current of 50mA, providing sufficient current for driving subsequent stages.

This component has a 20° angle of half sensitivity, making it suitable for directional IR sensing applications such as photointerrupters, optical switches, and IR communication systems. The operating temperature range from -40°C up to 100°C allows for use in demanding industrial, commercial, and laboratory conditions.

The 5 mm diameter clear or black plastic lens package provides a physical dimension ideal for through-hole PCB mounting, facilitating straightforward integration into electronic assemblies. Compliance with RoHS standards confirms the device is environmentally compliant and safe for use in modern electronic manufacturing.

Common applications include computer-controlled flashes, industrial electronics, control/drive circuits, and photointerrupter sensors. This phototransistor is part of the SFH 313 FA series known for reliable IR detection and durability.

This phototransistor operates with a peak wavelength of 870nm suitable for IR applications. It features a typical rise and fall time of 14 microseconds for responsive switching. The device supports a maximum collector current of 50mA ensuring reliable signal amplification.

Designed with a 20° angle of half sensitivity for accurate light detection directionality. Temperature operating range from -40°C to 100°C enables versatile industrial use. Compact 5 mm diameter package suitable for through-hole mounting on PCBs.

Compliant with RoHS standards, ensuring environmental safety. Ideal for use in photointerrupters, computer-controlled flashes, and industrial control circuits. Explore our range of high-quality Phototransistors and other optoelectronic components curated for industrial, laboratory, and electronics manufacturing applications on EnvMart.

ams OSRAM Infrared Phototransistor Through Hole 2-Pin 5 mm T-1 3/4 Package SFH 313 FA-2/3
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Frequently Asked Questions

The phototransistor operates with a peak wavelength of 870nm, making it suitable for infrared applications.

It supports a maximum collector current of 50mA, ensuring reliable signal amplification.

This device features a typical rise and fall time of 14 microseconds, allowing for responsive switching in electronic circuits.

The operating temperature range is from -40°C to 100°C, enabling versatile use in various industrial applications.

The phototransistor comes in a 5 mm (T-1 3/4) package with a diameter of 5.1mm, a height of 9mm, and a length of 5.9mm.

It has a 20° angle of half sensitivity, which aids in accurate light detection directionality.

Yes, it is compliant with RoHS standards, ensuring environmental safety in electronic manufacturing.

This model features 2 pins, suitable for through-hole mounting on PCBs.

Common applications include photointerrupters, computer-controlled flashes, and industrial control circuits.

The maximum collector emitter voltage is 70V, which is relevant for its operational limits.

The maximum dark current is 200nA, which can affect the performance in low-light conditions.

This phototransistor is part of the SFH 313 FA series, known for reliable infrared detection.

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