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Optek Infrared Phototransistor, Through Hole 3-Pin TO-18 Package OP802WSL

Category Phototransistor Brand Optek Condition New

Specifications

Country of Origin Mexico
Diameter 0.23mm
Brand Optek
Operating Temperature -65 to +125 °C
Height 5.13mm
Length 5.84mm
Model OP802WSL
Width 5.84mm
Mount Type Through Hole
Series OP800WSL
Maximum Operating Temperature 125°C
Package Type TO-18
Minimum Operating Temperature -65°C
Number Of Channels 1
Number of Pins 3
Typical Fall Time 7μs
Spectrums Detected Infrared
Collector Current 50mA
Maximum Light Current 3000μA
Maximum Dark Current 100nA
Collector Emitter Voltage 30V
Emitter Collector Voltage 5V

Key Features

  • The device is hermetically sealed for reliable operation.
  • Comes in a standard TO-18 metal can package for high power dissipation.
  • Operates over a wide temperature range from -65°C to +125°C.
  • Detects infrared spectrum with fast response times of 7 microseconds rise and fall time.
  • Maximum light current rating of 3000μA and maximum dark current of 100nA.
  • Through-hole mounting with 3 pins for easy PCB integration.
  • Collector current rating up to 50mA with collector emitter voltage of 30V.
  • Compact dimensions with a length and width of 5.84mm and diameter of 0.23mm.

Product Description

Optek OP802WSL infrared phototransistor is a hermetically sealed NPN silicon device designed for durable performance in harsh environments. Packaged in a TO-18 metal can, it supports through-hole mounting and provides high power dissipation capabilities. Suitable for sensitive detection of infrared light, it is ideal for use in applications demanding reliability and precision.

This phototransistor operates efficiently over a broad temperature range from -65°C up to 125°C, making it highly versatile for industrial, laboratory, and automotive testing environments where temperature extremes occur. The device detects infrared spectrums with quick rise and fall times of 7 microseconds, ensuring rapid signal response.

Electrical characteristics include a maximum light current of 3000μA and a dark current of 100nA, with a collector current limit of 50mA and a collector emitter voltage threshold of 30V. The compact TO-18 package measures approximately 5.84mm in length and width with a 0.23mm diameter, facilitating easy integration onto circuit boards.

Applications of this phototransistor span industrial equipment, measurement instruments, optoelectronic devices, automation systems, and communications technology that require precise infrared light detection. The device is manufactured in Mexico following the OP800WSL series standards and does not carry automotive certification.

The device is hermetically sealed for reliable operation. Standard TO-18 metal can package enables high power dissipation. Through-hole mounting facilitates stable circuit integration. Wide operating temperature range from -65°C to +125°C supports harsh environments.

Fast response times of 7μs rise and fall ensure efficient signal detection. Maximum light current of 3000μA and dark current of 100nA for sensitive detection. Collector current rating of 50mA and voltage limits ensure operational safety.

Compact dimensions allow for easy PCB placement in electronic assemblies. Manufactured in Mexico adhering to OP800WSL series quality standards.

For users needing high reliability infrared Phototransistors for applications in electronics, instrumentation, and industrial systems, the Optek OP802WSL offers an excellent solution. Explore additional Optek electronic components and optoelectronic products at EnvMart to complement your projects and engineering needs.

Optek Infrared Phototransistor, Through Hole 3-Pin TO-18 Package OP802WSL
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Frequently Asked Questions

The maximum collector current rating for the OP802WSL is 50mA.

It has a maximum light current rating of 3000μA.

The OP802WSL is housed in a standard TO-18 metal can package, which supports high power dissipation.

This phototransistor features 3 pins for through-hole mounting, facilitating easy PCB integration.

The OP802WSL has fast response times with rise and fall times of 7 microseconds.

The maximum dark current for this model is 100nA.

The collector emitter voltage limit for the OP802WSL is 30V.

This model has a diameter of 0.23mm.

The OP802WSL is manufactured in Mexico.

This phototransistor is suitable for applications in industrial equipment, measurement instruments, optoelectronic devices, automation systems, and communications technology that require precise infrared light detection.

The height of this model is 5.13mm.

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