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STMicroelectronics 4-Element Bi-Directional TVS Diode Array 80 W, 6-Pin SOT-23 ESDA6V1BC6

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STMicroelectronics 4-Element Bi-Directional TVS Diode Array 80 W, 6-Pin SOT-23 ESDA6V1BC6

Name: STMicroelectronics 4-Element Bi-Directional TVS Diode Array 80 W, 6-Pin SOT-23 ESDA6V1BC6
Brand: STMicroelectronics
SKU: 116439
Price: 0.23 USD
Availability: InStock

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Category TVS Diode Array Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	1.3mm
Length	3.05mm
Model	ESDA6V1BC6
Width	1.75mm
Mount Type	Surface
Maximum Operating Temperature	125°C
Package Type	SOT-23
Minimum Operating Temperature	-40°C
Pin Count	6
Number of Elements per Chip	4
Diode Configuration	Complex Array
Direction Type	Bi-Directional
Minimum Breakdown Voltage Vbr	6.1V
Maximum Reverse Stand-off Voltage Vwm	5V
Peak Pulse Power Dissipation Pppm	80W
Test Current It	1mA
Maximum Reverse Leakage Current	1μA

Key Features

Provides bi-directional transient voltage suppression for sensitive electronics.
Configured as a complex array with 4 elements per chip for enhanced protection.
Supports a minimum breakdown voltage of 6.1 V and a maximum reverse stand-off voltage of 5 V.
Operates reliably across a wide temperature range from -40°C to 125°C.
Features low maximum reverse leakage current of 1 μA to minimize power loss.
Test current rated at 1 mA and robust ESD protection capability.
Designed without automotive certification, suited for standard electronic applications.
Ideal for protecting circuits against electrostatic discharges and voltage transients.

Product Description

STMicroelectronics ESDA6V1BC6 is a 4-element bi-directional transient voltage suppression (TVS) diode array designed for advanced electrostatic discharge (ESD) protection in electronic devices. This TVS diode array delivers a peak pulse power dissipation of 80 W, making it suitable for safeguarding circuits from voltage transients and surges.

Housed in a compact 6-pin SOT-23 surface mount package, the device offers efficient layout flexibility with a length of 3.05 mm, width of 1.75 mm, and height of 1.3 mm. Its complex diode array configuration includes 4 elements per chip, enabling comprehensive protection across multiple lines.

Key technical features include a minimum breakdown voltage (Vbr) of 6.1 V, a maximum reverse stand-off voltage (Vwm) of 5 V, and a maximum reverse leakage current limited to 1 μA, ensuring minimal impact on normal circuit operation. The diode operates reliably within a wide temperature range from -40°C to 125°C, supporting diverse industrial and electronic applications.

Test current is rated at 1 mA, confirming stable and consistent performance under specified operating conditions. While the product lacks automotive standards certification, it is ideal for industrial, laboratory, electronic component manufacturing, and commercial applications where ESD protection is paramount.

Designed to be a compact and efficient solution, the ESDA6V1BC6 ensures protection of sensitive electronics against damaging voltage spikes and electrostatic discharges, supporting product longevity and operational safety.

Provides bi-directional transient voltage suppression for sensitive electronics. Configured as a complex array with 4 elements per chip for enhanced protection. Supports a minimum breakdown voltage of 6.1 V and a maximum reverse stand-off voltage of 5 V.

Operates reliably across a wide temperature range from -40°C to 125°C. Features low maximum reverse leakage current of 1 μA to minimize power loss. Surface mount device with compact dimensions: 3.05 mm length, 1.75 mm width, and 1.3 mm height.

Test current rated at 1 mA and robust ESD protection capability. Designed without automotive certification, suited for standard electronic applications. Ideal for protecting circuits against electrostatic discharges and voltage transients.

Package dimensions and pin configuration enable easy integration into printed circuit boards. Explore additional semiconductor components and TVS Diode Arrays on EnvMart to find complementary devices and solutions for your electronic protection needs.

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Frequently Asked Questions

The peak pulse power dissipation of the ESDA6V1BC6 is 80 W, making it suitable for protecting circuits from voltage transients and surges.

This model has a length of 3.05 mm, a width of 1.75 mm, and a height of 1.3 mm, allowing for efficient layout flexibility in electronic designs.

The minimum breakdown voltage (Vbr) for this diode array is 6.1 V, which is essential for its operation in protecting sensitive electronics.

The maximum reverse stand-off voltage (Vwm) for the ESDA6V1BC6 is 5 V, ensuring it can withstand voltage without conducting under normal conditions.

It operates reliably across a wide temperature range from -40°C to 125°C, making it suitable for various industrial and electronic applications.

The ESDA6V1BC6 is configured as a complex array with 4 elements per chip, providing enhanced protection against voltage transients.

The maximum reverse leakage current is limited to 1 μA, which helps to minimize power loss during normal operation.

The test current for the ESDA6V1BC6 is rated at 1 mA, ensuring stable and consistent performance under specified conditions.

This model is designed without automotive certification and is suited for standard electronic applications, making it ideal for industrial and laboratory use.