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onsemi Silicon Carbide (SiC) Schottky Diode 650 V 6 A Surface Mount PQFN Package FFSM0665B

Category Schottky Diodes & Rectifiers Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.1mm
Length 8mm
Model FFSM0665B
Width 8mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type PQFN
Minimum Operating Temperature -55°C
Pin Count 5
Maximum Continuous Forward Current If 6A
Peak Reverse Repetitive Voltage Vrrm 650V
Rectifier Type Schottky
Peak Reverse Current Ir 40μA
Maximum Forward Voltage Vf 1.7V

Key Features

  • Constructed with Silicon Carbide (SiC) technology for superior switching performance and reliability.
  • Designed for high efficiency and fast operating frequency in power electronics.
  • Maximum continuous forward current of 6 A and peak reverse voltage of 650 V.
  • Low peak reverse current of 40 microamps ensures minimal leakage.
  • Operates efficiently within temperature range of -55°C to 175°C.
  • Compact 8 mm by 8 mm by 1.1 mm PQFN package suitable for surface mounting.
  • Maximum forward voltage of 1.7 V reduces power losses.
  • Ideal for inverters, switch mode power supplies (SMPS), and uninterruptible power supplies (UPS).

Product Description

onsemi FFSM0665B is a high-performance Silicon Carbide (SiC) Schottky Diode designed with advanced technology to provide superior switching characteristics and enhanced reliability compared to conventional silicon diodes.

It features a maximum peak reverse repetitive voltage rating of 650 V and a maximum continuous forward current rating of 6 A, making it suitable for demanding power electronic applications.

The diode is housed in a compact 5-pin PQFN surface mount package measuring 8 mm in length and width with a height of 1.1 mm, facilitating efficient PCB assembly and space-saving designs.

The device operates reliably over a wide temperature range from -55°C to 175°C, and has a low peak reverse current of 40 microamps, minimizing leakage and enhancing energy efficiency.

With a maximum forward voltage drop of 1.7 V, the FFSM0665B minimizes conduction losses, contributing to improved system performance.

This Silicon Carbide Schottky Diode is ideally suited for use in industrial and commercial power electronics such as inverters, switching mode power supplies (SMPS), uninterruptible power supplies (UPS), and other high-frequency switching applications.

Constructed using Silicon Carbide technology for faster switching and higher power density. Surface mount PQFN package for compact and efficient PCB integration. Wide operating temperature ensures reliability in harsh industrial environments.

Low forward voltage and peak reverse current for reduced power loss. Suitable for automotive and industrial power semiconductor applications. Robust design contributing to reduced electromagnetic interference (EMI). Explore the full range of Schottky Diodes & Rectifiers on EnvMart for reliable semiconductor components tailored to industrial, electronic, and power management systems.

Explore more products in our Schottky Diodes & Rectifiers category.

onsemi Silicon Carbide (SiC) Schottky Diode 650 V 6 A Surface Mount PQFN Package FFSM0665B
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Frequently Asked Questions

It has a maximum continuous forward current rating of 6 A.

The PQFN package measures 8 mm in length, 8 mm in width, and 1.1 mm in height.

This unit operates efficiently over a temperature range of -55°C to 175°C.

The maximum forward voltage drop is 1.7 V, which helps reduce power losses.

It is designed for surface mounting, making it suitable for efficient PCB assembly.

This diode has a pin count of 5.

It is classified as a Schottky rectifier, constructed using Silicon Carbide technology.

The country of origin for this diode is India.

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