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Infineon IGBT Single Transistor IC 74A 650V 3-Pin TO-247 Through Hole AIGW40N65H5XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | AIGW40N65H5XKSA1 |
| Mount Type | Through Hole |
| Series | High Speed Fifth Generation |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | AEC-Q101 |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 74A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.66V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 250W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- Maximum continuous collector current of 74 amps ensures robust performance.
- Maximum collector-emitter voltage rating of 650 volts for high voltage applications.
- Designed with a TO-247 package for easy through-hole mounting.
- Withstands operating temperatures from -40°C to 175°C ensuring durability.
- Provides low collector-emitter saturation voltage of 1.66 volts for efficient power dissipation.
- Compliant with automotive AEC-Q101 standards for enhanced reliability.
- High speed fifth generation technology delivers low switching losses and reduced electromagnetic interference.
- Three-pin design facilitates straightforward circuit integration.
Product Description
Infineon's AIGW40N65H5XKSA1 is a high-performance IGBT Single Transistor IC designed for efficient and reliable power switching tasks. This device features a maximum continuous collector current of 74A and a maximum collector-emitter voltage (Vceo) of 650V, making it ideal for high power applications.
Encased in a TO-247 package with a through-hole mount design, this transistor facilitates robust mechanical and electrical connections. It supports a maximum power dissipation of 250W and operates reliably in temperature ranges from -40°C to 175°C, suitable for harsh industrial environments.
This transistor achieves a low collector-emitter saturation voltage of 1.66V, promoting energy-efficient operation with reduced conduction losses. The maximum gate-emitter voltage is rated at ±30V, allowing reliable gate control without damage risk.
Compliant with the automotive AEC-Q101 standard, this device delivers enhanced robustness and reliability, meeting stringent automotive quality requirements. Its high speed fifth generation technology provides low switching losses and minimizes electromagnetic interference, optimizing performance in both hard switching and resonant topologies.
The three-pin TO-247 configuration simplifies integration into power electronic circuits, making this product suitable for a wide range of industrial and automotive applications, including motor drives, inverters, and power supplies.
Maximum continuous collector current of 74A. Maximum collector-emitter voltage of 650V. Maximum power dissipation of 250W. Three-pin TO-247 package, through-hole mount. Operating temperature range from -40°C to 175°C. Maximum gate-emitter voltage ±30V.
Low saturation voltage of 1.66V. Automotive standard AEC-Q101 compliant. High speed fifth generation technology. Suitable for industrial and automotive power electronics.
This Infineon IGBT transistor is an essential component for designers seeking reliable and efficient switching elements. Explore the Electronics & Electricals category at EnvMart for more semiconductor devices and power components.
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Frequently Asked Questions
The maximum continuous collector current of this IGBT transistor is 74A.
This model has a maximum collector-emitter voltage rating of 650V, making it suitable for high voltage applications.
It is encased in a TO-247 package designed for through-hole mounting, facilitating robust connections.
The operating temperature range for this IGBT transistor is from -40°C to 175°C.
This transistor supports a maximum power dissipation of 250W.
The collector-emitter saturation voltage for this model is 1.66V, promoting efficient power dissipation.
The maximum gate-emitter voltage is rated at ±30V, allowing reliable gate control.
Yes, it is compliant with the automotive AEC-Q101 standards, ensuring enhanced reliability.
It utilizes high speed fifth generation technology, which provides low switching losses and minimizes electromagnetic interference.
This model features a three-pin design, simplifying integration into power electronic circuits.
This IGBT is suitable for a wide range of industrial and automotive applications, including motor drives, inverters, and power supplies.
The country of origin for this IGBT transistor is India.
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