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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 1.85 A 1 kV Enhancement 3-Pin IPAK STU2NK100Z

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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 1.85 A 1 kV Enhancement 3-Pin IPAK STU2NK100Z

Name: STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 1.85 A 1 kV Enhancement 3-Pin IPAK STU2NK100Z
Brand: STMicroelectronics
SKU: 409215
Price: 0.94 USD
Availability: InStock

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Category Electronics Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	6.9mm
Length	6.6mm
Model	STU2NK100Z
Width	2.4mm
Mount Type	Through Hole
Series	MDmesh, SuperMESH
Maximum Operating Temperature	150°C
Package Type	IPAK
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	1.85A
Maximum Drain Source Voltage Vds	1kV
Maximum Drain Source Resistance Rds	8.5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	70W
Typical Gate Charge Qg @ Vgs	16nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	1.6V

Key Features

High voltage rating up to 1000 volts for robust switching applications.
Maximum continuous drain current of 1.85 amperes.
Enhancement mode N-Channel operation for effective power control.
Low maximum drain source resistance of 8.5 ohms to ensure efficient conduction.
Typical gate charge of 16 nanocoulombs at Vgs, enabling fast switching.
Wide operating temperature range from -55°C to 150°C for industrial reliability.
Package type IPAK with through-hole mount and 3 pins for easy PCB integration.
Maximum power dissipation of 70 watts for high performance under load.

Product Description

STMicroelectronics STU2NK100Z is a high-performance N-Channel MDmesh SuperMESH type MOSFET designed for power switching and amplification in industrial electronic circuits. It supports a maximum continuous drain current of 1.85 A and a drain source voltage rating of up to 1 kV, ensuring reliable operation in demanding environments. Its enhancement mode operation and low on-resistance of 8.5 ohms help optimize efficiency and heat dissipation.

This MOSFET is housed in a 3-pin IPAK through-hole package allowing for straightforward mounting on printed circuit boards. It features a typical gate charge of 16 nC at Vgs, facilitating fast switching speeds, which is essential for switching regulators and power converters used in automotive, industrial, and consumer electronics.

The device is rated for a maximum power dissipation of 70 watts and can safely operate over a wide temperature range from -55°C to 150°C, making it suitable for harsh industrial or automotive conditions. The maximum gate source voltage is rated at -30 V to +30 V to prevent gate damage during operation.

Compact physical dimensions (6.6 mm length, 2.4 mm width, 6.9 mm height) enable high-density circuit designs. The STU2NK100Z belongs to the MDmesh SuperMESH series, known for robust performance and reliability.

High voltage rating up to 1000 V for demanding power applications. Enhanced current handling with 1.85 A maximum continuous drain current. Low gate charge for reduced switching losses. Wide operating temperature spectrum for industrial environments.

Through-hole IPAK package ensures dependable PCB mounting. Compact size supports space-saving designs. Suitable for power management, industrial, automotive, and consumer electronics applications.

This product facilitates efficient power control and switching in electronic circuits and is ideal for engineers and designers requiring reliable MOSFET components compliant with modern Electronics standards. Explore our extensive range of discrete semiconductor devices for varied industrial applications at EnvMart.