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Toshiba 30 V 5 A Surface Mount Switching Diode Schottky USC Package CUS10S30,H3F(T

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Toshiba 30 V 5 A Surface Mount Switching Diode Schottky USC Package CUS10S30,H3F(T

Name: Toshiba 30 V 5 A Surface Mount Switching Diode Schottky USC Package CUS10S30,H3F(T
Brand: Toshiba
SKU: 404512
Price: 0.09 USD
Availability: InStock

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Category Semiconductors Brand Toshiba Condition New

Specifications

Country of Origin	India
Brand	Toshiba
Model	CUS10S30,H3F(T
Mount Type	Surface
Maximum Operating Temperature	125°C
Package Type	USC
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	2
Maximum Continuous Forward Current If	5A
Peak Reverse Repetitive Voltage Vrrm	30V
Rectifier Type	Schottky
Peak Reverse Current Ir	500μA
Peak Non-Repetitive Forward Surge Current Ifsm	5A
Maximum Forward Voltage Vf	0.45V

Key Features

Maximum continuous forward current of 5 A ensures high load capability.
Peak reverse repetitive voltage rating of 30 V suitable for low-voltage circuits.
Low maximum forward voltage drop of 0.45 V for efficient operation.
Compact 2-pin USC surface mount package compatible with SOD-323 and SC-76.
Operates reliably over temperature range from -55°C to 125°C.
Peak non-repetitive forward surge current rating of 5 A for transient events.
Low peak reverse current of 500 μA minimizing leakage losses.
RoHS compliant, ensuring environmental and regulatory adherence.

Product Description

Toshiba CUS10S30,H3F(T is a surface mount switching diode with Schottky rectifier characteristics. It offers a maximum continuous forward current of 5 A and a peak reverse repetitive voltage of 30 V, making it suitable for power semiconductor applications requiring high-speed switching performance.

The diode is housed in a USC package, which is a compact 2-pin surface mount form factor equivalent to SOD-323 and SC-76 packages. This package type facilitates efficient PCB layout in high-density electronic designs.

Designed for operation over a wide temperature range of -55°C to +125°C, this diode ensures reliability in diverse industrial, electronic, and power management applications. The low maximum forward voltage of 0.45 V reduces conduction losses, improving efficiency in switching and rectification circuits.

The diode supports peak non-repetitive forward surge currents up to 5 A, accommodating transient current spikes. Its peak reverse current is limited to 500 μA, helping to minimize leakage currents and power dissipation.

Manufactured to meet RoHS standards, this diode complies with environmental and safety regulations. However, it is not designed for automotive-grade standards, thus primarily intended for industrial, laboratory, and commercial electronic assemblies.

Maximum continuous forward current of 5 A. Peak reverse repetitive voltage of 30 V. Low forward voltage drop of 0.45 V. Compact 2-pin USC surface mount package. Operating temperature range from -55°C to 125°C. Peak surge current rating of 5 A.

Low peak reverse current of 500 μA. RoHS compliant. Not suitable for automotive applications. Ideal for high-speed switching in power semiconductor circuits.

This diode is widely utilized in electronic components, power connectors, and semiconductor discrete assemblies in industrial and laboratory settings. For professionals looking for reliable, efficient switching diodes in compact form factors, the Toshiba CUS10S30,H3F(T provides a sturdy solution.

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