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Infineon High Performance CMOS Fast Static SRAM Memory 16MB, 1M x 16 Bit Organisation, 10ns Access Time CY7C1061GE30-10ZSXI

Category SRAM Memory Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.05mm
Operating Voltage Range 1.65 V to 2.2 V, 2.2 V to 3.6 V, and
Length 22.51mm
Model CY7C1061GE30-10ZSXI
Width 10.26mm
Mount Type Surface
Series CY7C1061GE
Maximum Operating Temperature 85°C
Package Type TSOP
Minimum Operating Temperature -40°C
Memory size 16MB
Pin Count 54
Maximum Supply Voltage 3.6V
Minimum Supply Voltage 2.2V
Supply Current 110mA
Maximum Clock Frequency 100MHz
Organisation 1M x 16 Bit
Number of Bits per Word 16
Maximum Random Access Time 10ns
Number of Words 1M
Timing Type Asynchronous

Key Features

  • Asynchronous timing type for fast data access.
  • Surface mount type in a 54-pin TSOP package.
  • Operating voltage ranges from 1.65 V to 3.6 V with low active and standby currents.
  • Embedded error-correcting code (ECC) supports single-bit error correction.
  • Wide operating temperature range from -40°C to 85°C.
  • Maximum clock frequency of 100MHz ensures high-speed performance.
  • TTL compatible inputs and outputs for easy integration.
  • Error indication pin (ERR) signals single-bit error during read cycles.

Product Description

Infineon CY7C1061GE30-10ZSXI is a high performance CMOS fast static SRAM Memory device with embedded error correcting code (ECC) designed for demanding electronic applications. It features a memory organisation of 1 million words by 16 bits, providing a total memory size of 16MB. This asynchronous SRAM operates at a maximum random access time of 10 nanoseconds and supports clock frequencies up to 100MHz, allowing for rapid and reliable data handling.

The device is surface mounted in a 54-pin TSOP package, with compact dimensions of 22.51 mm length, 10.26 mm width, and 1.05 mm height, making it suitable for space-constrained electronic designs. It supports an operating voltage range from 1.65 V to 3.6 V and consumes low active and standby currents enhancing energy efficiency. Additionally, it incorporates a dedicated ERR pin for signalling single-bit errors detected and corrected during read operations, improving system reliability.

The SRAM supports TTL compatible inputs and outputs, facilitating seamless integration with various digital circuits. It is qualified to operate reliably across a wide temperature range from -40°C to 85°C, supporting automotive and industrial environmental conditions. Its embedded ECC ensures data integrity, enabling correction of single-bit errors on the fly.

Asynchronous timing type supports fast memory access. Low power consumption with 110 mA supply current at 100 MHz. Surface mount TSOP packaging for compact electronic assemblies. Error-correcting code (ECC) for single-bit error detection and correction.

Wide operational temperature range suited for industrial applications. TTL compatible input and output pins. Embedded error indication pin (ERR). Compact and lightweight form factor with exact package dimensions. Ideal for automotive, industrial, laboratory, and electronic manufacturing sectors.

This Infineon SRAM model CY7C1061GE30-10ZSXI is a reliable memory solution for engineers and designers needing high-speed, robust static RAM modules that assure data integrity. EnvMart offers comprehensive product listings suited for electronic component procurement and technical sourcing.

Infineon High Performance CMOS Fast Static SRAM Memory 16MB, 1M x 16 Bit Organisation, 10ns Access Time CY7C1061GE30-10ZSXI
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Frequently Asked Questions

The maximum random access time for this SRAM memory is 10 nanoseconds.

This model features a memory organization of 1 million words by 16 bits, providing a total memory size of 16MB.

It supports a maximum clock frequency of 100MHz, ensuring high-speed performance.

The operating voltage range for this SRAM is from 1.65 V to 3.6 V.

The dimensions of the package are 22.51 mm in length, 10.26 mm in width, and 1.05 mm in height.

Yes, this model includes embedded error-correcting code (ECC) that supports single-bit error correction.

The supply current at 100 MHz is 110 mA.

It can operate reliably across a wide temperature range from -40°C to 85°C.

It supports TTL compatible inputs and outputs for easy integration with various digital circuits.

This SRAM memory is designed for surface mounting in a 54-pin TSOP package.

This model belongs to the CY7C1061GE series of SRAM memory devices.

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