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IXYS HiperFET Polar N-Channel MOSFET 26A 600V Enhancement 3-Pin TO-247 IXFH26N60P

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IXYS HiperFET Polar N-Channel MOSFET 26A 600V Enhancement 3-Pin TO-247 IXFH26N60P

Name: IXYS HiperFET Polar N-Channel MOSFET 26A 600V Enhancement 3-Pin TO-247 IXFH26N60P
Brand: IXYS
SKU: 293270
Price: 10.7 USD
Availability: InStock

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Category MOSFET Brand IXYS Condition New

Specifications

Country of Origin	India
Brand	IXYS
Height	21.46mm
Length	16.26mm
Model	IXFH26N60P
Width	5.3mm
Mount Type	Through Hole
Series	HiperFET, Polar
Maximum Operating Temperature	150°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	26A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	270mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	460W
Typical Gate Charge Qg @ Vgs	72nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	1.5V
N-Channel MOSFET Transistor, 24 A, 500 V, 3-Pin TO-3PN Fairchild FQA24N50Brand	Fairchild Semiconductor

Key Features

This MOSFET features an enhancement mode and low maximum drain-source resistance of 270mΩ.
It supports a maximum power dissipation of 460W, suitable for high-power applications.
The device operates reliably from -55°C to 150°C operating temperatures.
The typical gate charge is 72nC at Vgs, ensuring fast switching performance.
The maximum gate-source voltage is rated at -30V to +30V for flexible gate control.
Its compact dimensions of 21.46mm height, 16.26mm length, and 5.3mm width enable versatile mounting.
The package type is through-hole TO-247 for robust industrial applications.

Product Description

The IXYS IXFH26N60P is a Polar Series HiperFET N-Channel Power MOSFET designed for high-efficiency switching and power management tasks. It features a maximum continuous drain current of 26 amperes and a maximum drain-source voltage rating of 600 volts. This device is packaged in a 3-Pin TO-247 through-hole configuration, facilitating easy mounting and integration into power electronics systems.

With an enhancement channel mode and a low maximum drain-source resistance (Rds) of 270 milliohms, the IXFH26N60P delivers efficient conduction and minimal heat generation under load. It supports a high power dissipation of 460 watts while maintaining stable operation within a broad temperature range from -55°C to 150°C. The typical gate charge of 72 nanocoulombs at gate-source voltage enables rapid switching with reduced losses.

The device accommodates a maximum gate-source voltage range of -30V to +30V, offering flexibility in gate drive options for various industrial and electronic applications. Its compact dimensions of 21.46 mm in height, 16.26 mm in length, and 5.3 mm in width make it suitable for space-constrained designs.

IXYS’s HiperFET Polar series MOSFETs are optimized for fast intrinsic diode performance, making them ideal for industrial, laboratory, power supplies, and manufacturing applications requiring reliable, high-speed switching and efficient power control.

This N-Channel MOSFET is ideal for power conversion, motor control, and high-frequency switching. Fast intrinsic diode characteristics reduce switching losses and improve reliability. Robust thermal and electrical specifications support demanding industrial environments.

Through-hole TO-247 package ensures durability and ease of assembly. Suitable for use in power supplies, industrial automation, and HVAC control systems. Explore more components and power devices in the MOSFET category on EnvMart for your electronic design and manufacturing requirements.