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onsemi Transistor PNP 600 mA, 60 V, 3-Pin SOT-23 MMBT2907ALT3G

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onsemi Transistor PNP 600 mA, 60 V, 3-Pin SOT-23 MMBT2907ALT3G

Name: onsemi Transistor PNP 600 mA, 60 V, 3-Pin SOT-23 MMBT2907ALT3G
Brand: onsemi
SKU: 292339
Price: 0.03 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	2.4mm
Length	3.04mm
Model	MMBT2907ALT3G
Width	1.35mm
Mount Type	Surface
Series	MMBT2907A
Maximum Operating Temperature	150°C
Package Type	SOT-23
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-60V
Minimum DC Current Gain hFE	50
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	-5V
Maximum Collector Base Voltage VCBO	-60V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	350mW
Maximum DC Collector Current Idc	-600mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

Designed for surface mount applications with 3-pin configuration.
Maximum power dissipation of 350 mW allows for efficient thermal handling.
Provides a minimum DC current gain (hFE) of 50 for reliable amplification.
Maximum operating temperature up to 150°C ensures durability under demanding conditions.
Compliance with AEC-Q101 automotive standard guarantees high quality and reliability.
Maximum transition frequency of 100 MHz suits high-frequency applications.
Suitable for general purpose amplification in electronic and industrial circuits.

Product Description

The onsemi MMBT2907ALT3G is a general purpose bipolar PNP transistor designed for a wide range of electronic applications requiring reliable switching and amplification. Its maximum collector current of 600 mA and collector-emitter voltage of 60 V make it suitable for moderate power handling in compact circuits.

Encapsulated in a 3-pin SOT-23 surface-mount package, this transistor offers a low-profile form factor ideal for dense PCB layouts. It supports a maximum power dissipation of 350 mW, which aids in maintaining operational stability under thermal stress.

The transistor features a minimum DC current gain (hFE) of 50, enabling effective signal amplification. With a maximum operating temperature of 150°C, it is capable of withstanding harsh environments and thermal cycling typically encountered in automotive and industrial use cases.

Meeting the stringent AEC-Q101 automotive qualification standards, the MMBT2907ALT3G assures high quality and robustness, making it suitable for automotive electronics, industrial control systems, and consumer electronics.

Its maximum transition frequency of 100 MHz permits applications in high-frequency circuits. Compact physical dimensions of 3.04 mm length, 1.35 mm width, and 2.4 mm height allow for versatile PCB design layouts.

Surface-mount 3-pin SOT-23 packaging for space-saving installation. 600 mA maximum collector current for high-load applications. 60 V maximum collector-emitter voltage for moderate voltage circuits. 350 mW power dissipation to handle typical thermal loads.

Minimum DC current gain of 50 for stable amplification. 150°C max operating temperature for reliable performance in harsh environments. AEC-Q101 standard qualification for automotive-grade reliability. 100 MHz transition frequency suitable for fast switching.

Compact size dimensions compatible with dense PCB architectures.

This transistor is an excellent choice for industrial, automotive, and consumer electronics requiring durable, high-performance PNP bipolar transistors in a compact surface-mount format. Explore more high-quality semiconductors and Bipolar Transistors at EnvMart for your technical and production needs.

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Frequently Asked Questions

The maximum collector current for this model is 600 mA, making it suitable for high-load applications.

The maximum collector-emitter voltage is 60 V, which allows it to handle moderate voltage circuits effectively.

It has a maximum power dissipation of 350 mW, facilitating efficient thermal handling in various applications.

The maximum transition frequency is 100 MHz, making it suitable for high-frequency applications.

This model has dimensions of 3.04 mm in length, 1.35 mm in width, and 2.4 mm in height, ideal for compact PCB layouts.

The minimum DC current gain (hFE) is 50, ensuring reliable amplification in circuits.

It can operate at a maximum temperature of 150°C, which is suitable for harsh environments.

The MMBT2907ALT3G complies with the AEC-Q101 automotive standard, ensuring high quality and reliability.

This transistor is encapsulated in a 3-pin SOT-23 surface-mount package, suitable for space-saving installations.

The MMBT2907ALT3G is a single PNP transistor, designed for general purpose amplification and switching applications.

The maximum emitter-base voltage (VEBO) is -5 V, which is important for ensuring safe operation in circuits.

This transistor is suitable for automotive electronics, industrial control systems, and consumer electronics requiring reliable switching and amplification.