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DiodesZetex N-Channel Enhancement MOSFET 1.3 A 20 V 3-Pin SOT-323 DMN2310UW-7

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DiodesZetex N-Channel Enhancement MOSFET 1.3 A 20 V 3-Pin SOT-323 DMN2310UW-7

Name: DiodesZetex N-Channel Enhancement MOSFET 1.3 A 20 V 3-Pin SOT-323 DMN2310UW-7
Brand: DiodesZetex
SKU: 291625
Price: 0.06 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1.1mm
Length	2.2mm
Model	DMN2310UW-7
Width	1.35mm
Mount Type	Surface
Series	DMN
Maximum Operating Temperature	150°C
Package Type	SOT-323
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	1.3A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	200mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	0.45W
Typical Gate Charge Qg @ Vgs	0.7nC
Maximum Gate Source Voltage Vgs	8V
Forward Voltage Vf	1.2V

Key Features

Designed for high efficiency power management applications.
Features low on-state resistance of 200 mΩ for minimal power loss.
Supports maximum continuous drain current of 1.3 A and drain-source voltage of 20 V.
Surface mount device with enhancement mode channel operating up to 150°C.
Typical gate charge of 0.7 nC enabling fast switching speed.
Meets AEC-Q101 automotive standard for reliability.
Maximum power dissipation is 0.45 W for robust thermal performance.

Product Description

DiodesZetex DMN2310UW-7 is a N-Channel enhancement mode MOSFET designed for efficient power management in electronic and industrial applications. The device features a maximum continuous drain current of 1.3 A and a drain-source voltage rating of 20 V, suitable for switching and amplification tasks in compact circuits.

Its SOT-323 package enables surface mount mounting with small footprint dimensions of 2.2 mm length, 1.35 mm width, and 1.1 mm height, facilitating space-saving PCB designs. The device offers a low maximum drain-source on resistance of 200 mΩ which minimizes power loss during operation, along with a typical gate charge of 0.7 nC allowing rapid switching speeds.

The DMN2310UW-7 maintains stable operation across a temperature range from -55°C to a maximum operating temperature of 150°C. With a maximum power dissipation rating of 0.45 W, it supports demanding industrial and automotive electronics environments. Compliance with AEC-Q101 automotive standards underscores its reliability for automotive electronic systems.

Applications include power management circuits, load switching, DC-DC converters, and general-purpose electronic devices requiring efficient and reliable MOSFET components. The enhancement mode operation ensures the MOSFET switches on fully only when the gate voltage is above the threshold voltage, improving control in electronic designs.

Designed for high efficiency power management applications. Features low on-state resistance of 200 mΩ for minimal power loss. Supports maximum continuous drain current of 1.3 A and drain-source voltage of 20 V. Surface mount device with enhancement mode channel operating up to 150°C.

Typical gate charge of 0.7 nC enabling fast switching speed. Meets AEC-Q101 automotive standard for reliability. Compact package size ensures space-efficient PCB layout. Maximum power dissipation of 0.45 W for thermal robustness.

Explore the wide range of DiodesZetex MOSFETs and electronic components available on EnvMart for sophisticated semiconductor solutions tailored to industrial, automotive, and electronics manufacturing sectors.