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Vishay High Current Density Surface-Mount Schottky Rectifier Diode 150 V 35 A TO-252 Package V35PW15HM3/I
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 13in |
| Brand | Vishay |
| Height | 1.3mm |
| Length | 6.1mm |
| Model | V35PW15HM3/I |
| Width | 5.97mm |
| Mount Type | Surface |
| Series | eSMP |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | UL 94 V-0, RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Maximum Continuous Forward Current If | 35A |
| Peak Reverse Repetitive Voltage Vrrm | 150V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 25mA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 260A |
| Maximum Forward Voltage Vf | 1.4V |
Key Features
- Supports maximum continuous forward current of 35 amps.
- Peak reverse repetitive voltage rating of 150 volts.
- Low forward voltage drop of 1.4 volts for high efficiency operation.
- Operating temperature range from -40°C to 150°C.
- Equipped with three pins in DPAK (TO-252) package suitable for surface mounting.
- Peak non-repetitive forward surge current of 260 amps.
- Compliant with automotive standard AEC-Q101 for reliability.
- Constructed with trench MOS Schottky technology to minimize power losses.
Product Description
Vishay V35PW15HM3/I is a high current density Schottky rectifier diode designed for surface-mount applications in automotive, industrial, and power electronic systems. Housed in a low-profile TO-252 (DPAK) package, it offers efficient switching with a low forward voltage drop of 1.4 V, supporting continuous forward currents up to 35 A. The diode operates reliably over a wide temperature range from -40°C to 150°C, making it suitable for harsh environmental conditions.
This Schottky Diode is built using advanced trench MOS technology to ensure minimal power losses and high efficiency, ideal for use in low voltage, high frequency DC/DC converters, free wheeling diode circuits, and polarity protection applications. Its peak non-repetitive forward surge current rating of 260 A enables it to handle transient high-current conditions without damage.
The package dimensions include a length of 6.1 mm, width of 5.97 mm, and thickness of 1.3 mm, facilitating automated PCB assembly processes. Certified to meet AEC-Q101 automotive standards and RoHS compliance requirements, it ensures reliability and regulatory conformance. The diode features three-pin configuration suitable for surface mount technology (SMT).
Maximum continuous forward current of 35 A suitable for high power applications. Peak reverse voltage of 150 V to withstand voltage transients. Low forward voltage drop for energy-efficient circuit operation. Wide operating temperature range for durability in challenging settings.
Compliant with automotive grade AEC-Q101 for trusted performance. Compact TO-252 package with 3-pin DPAK form factor allows automated placement. Trench MOS Schottky technology enables lower power dissipation. Meets UL 94 V-0 flammability and RoHS environmental standards.
Ideal for DC/DC converters, freewheeling, polarity protection, and power switching.
This diode is a reliable choice for electronic component inventories for OEMs, system integrators, and repair operations requiring robust and efficient high current Schottky rectifiers. Explore additional Vishay power semiconductors and discrete semiconductors for comprehensive design solutions in the EnvMart catalog.
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Frequently Asked Questions
The maximum continuous forward current rating is 35 A.
The operating temperature range is from -40°C to 150°C.
The forward voltage drop is 1.4 V, which contributes to its high efficiency operation.
It is housed in a TO-252 (DPAK) package suitable for surface mounting.
The peak non-repetitive forward surge current rating is 260 A.
This diode features a three-pin configuration.
It complies with automotive standard AEC-Q101 and is RoHS certified.
The dimensions are 6.1 mm in length, 5.97 mm in width, and 1.3 mm in thickness.
It is constructed using trench MOS Schottky technology to minimize power losses.
The country of origin for this model is India.
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