Infineon High-Performance CMOS Fast Static SRAM 4MB, 512K x 16 Bit, 10ns, SOJ 36-pin CY7C1049GN-10VXI

Infineon CY7C1049GN-10VXI is a high-performance CMOS fast static RAM device featuring 4MB memory capacity organized as 512K words by 8 bits. It supports asynchronous timing with a maximum random access time of 10 nanoseconds, suitable for applications requiring quick data access.

Read operations are performed by asserting CE and Output Enable (OE) inputs LOW, providing efficient memory access control.

This SRAM is packaged in a 36-pin SOJ surface mount package, measuring 0.93mm in length, 0.4mm in width, and 0.12mm in height, suitable for compact electronic designs. It operates over a wide voltage range of 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V, making it versatile for diverse power conditions.

The device features typical active current consumption (ICC) of 38 mA and standby current (ISB2) of 6 mA, supporting energy-efficient operations. It is RoHS compliant and uses lead-free materials, providing environmental compliance for modern electronic manufacturing.

Organized as 512K words by 8 bits, enabling efficient data storage. Asynchronous timing type to support flexible memory access. Surface mount SOJ package allows easy PCB mounting. High-speed 10 ns random access time ensures quick data retrieval.

Wide operating voltage range from 1.65 V to 5.5 V. Low active and standby current consumption for energy efficiency. TTL-compatible inputs and outputs for interface compatibility. Pb-free RoHS compliant package. Compact physical dimensions ideal for electronic assemblies.

This SRAM device is ideal for use in industrial, laboratory, manufacturing, communication, and electronic applications requiring fast, reliable, and compact memory solutions. It suits scenarios from embedded systems to larger scale electronics designs.

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