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Vishay Phototransistor BPW77NB 20 ° Visible Light Infrared Sensitivity Through Hole 3-Pin TO-18 Package BPW77NB

Category Phototransistors Brand Vishay Condition New

Specifications

Country of Origin India
Diameter 4.69mm
Brand Vishay
Operating Temperature -40 to +125 °C
Height 6.15mm
Length 5.5mm
Model BPW77NB
Packaging Bulk
Width 5.5mm
Mount Type Through Hole
Series BPW77NB
Maximum Operating Temperature 125°C
Package Type TO-18
Minimum Operating Temperature -40°C
Number Of Channels 1
Standards/Approvals RoHS
Number of Pins 3
Typical Rise Time 6μs
Typical Fall Time 5μs
Peak Wavelength 850nm
Spectrums Detected Visible Light, Infrared
Angle of Half Sensitivity 20 °
Collector Current 50mA
Maximum Light Current 20000μA
Maximum Dark Current 100nA
Collector Emitter Voltage 70V

Key Features

  • Hermetically sealed TO-18 package with glass lens ensures protection and reliability.
  • High photo and radiant sensitivity for accurate light detection.
  • Fast response times with typical rise time of 6 μs and fall time of 5 μs.
  • Operating temperature range from -40 °C to +125 °C for robust industrial use.
  • Maximum collector current of 50 mA suitable for various electronic control circuits.
  • Compact dimensions with 5.5 mm length, 4.69 mm diameter, and 6.15 mm height.
  • Bulk packaging for easy integration into manufacturing processes.
  • RoHS compliant ensuring environmental and safety standards.

Product Description

Vishay BPW77NB phototransistor BPW77NB is a silicon NPN phototransistor designed for detection of visible light and infrared radiation. Packaged in a hermetically sealed TO-18 glass lens package, this device offers high sensitivity and fast response times, making it suitable for use in electronic control, drive circuits, and a variety of detection applications.

The phototransistor features a 20 ° angle of half sensitivity, enabling precise light detection with a maximum collector current of 50 mA. Operating over a wide temperature range from -40 °C to +125 °C, it is suitable for demanding industrial and commercial environments.

Key physical specifications include a length of 5.5 mm, diameter of 4.69 mm, and height of 6.15 mm. The device uses a through-hole mount with 3 pins in standard TO-18 packaging, allowing easy installation on printed circuit boards.

Typical rise and fall times of 6 μs and 5 μs respectively support rapid switching applications. This phototransistor operates at a peak wavelength of 850 nm, detecting both visible and near-infrared light effectively.

RoHS compliance guarantees adherence to environmental and safety standards, making this a reliable choice for electronic design engineers in industrial, laboratory, or manufacturing settings requiring precise optical sensing.

Hermetically sealed TO-18 package with glass lens ensures protection and reliability. High photo and radiant sensitivity for accurate light detection. Fast response times with typical rise time of 6 μs and fall time of 5 μs.

Operating temperature range from -40 °C to +125 °C for robust industrial use. Maximum collector current of 50 mA suitable for various electronic control circuits. Compact dimensions with 5.5 mm length, 4.69 mm diameter, and 6.15 mm height.

Bulk packaging for easy integration into manufacturing processes. RoHS compliant ensuring environmental and safety standards. Ideal for detection applications in visible and near IR spectrum at peak wavelength 850 nm. Through-hole mount type facilitates secure PCB installation.

Explore our Electronics & Electricals category at EnvMart for a wide range of Phototransistors and other electronic components designed for professional applications in industrial and commercial systems.

Vishay Phototransistor BPW77NB 20 ° Visible Light Infrared Sensitivity Through Hole 3-Pin TO-18 Package BPW77NB
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Frequently Asked Questions

The operating temperature range of the BPW77NB is from -40 °C to +125 °C, making it suitable for robust industrial applications.

The maximum collector current for the BPW77NB phototransistor is 50 mA, which is suitable for various electronic control circuits.

This phototransistor has a length of 5.5 mm, a diameter of 4.69 mm, and a height of 6.15 mm, allowing for compact integration into circuits.

The typical rise time is 6 μs and the fall time is 5 μs, supporting rapid switching applications.

The BPW77NB uses a through-hole mount with 3 pins, facilitating secure installation on printed circuit boards.

The peak wavelength for the BPW77NB is 850 nm, allowing it to effectively detect both visible and near-infrared light.

Yes, the BPW77NB is RoHS compliant, ensuring it meets environmental and safety standards.

The BPW77NB detects both visible light and infrared radiation, making it versatile for various applications.

The angle of half sensitivity for this model is 20 °, enabling precise light detection.

The BPW77NB is packaged in bulk, which facilitates easy integration into manufacturing processes.

The maximum collector-emitter voltage for the BPW77NB is 70 V, providing flexibility in various circuit designs.

The BPW77NB phototransistor features a single channel, suitable for straightforward light detection applications.

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