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Infineon High-Performance CMOS Fast Static SRAM 4096 kB Asynchronous SOJ Package CY7C1049GN30-10VXIT

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Infineon High-Performance CMOS Fast Static SRAM 4096 kB Asynchronous SOJ Package CY7C1049GN30-10VXIT

Name: Infineon High-Performance CMOS Fast Static SRAM 4096 kB Asynchronous SOJ Package CY7C1049GN30-10VXIT
Brand: Infineon
SKU: 162967
Price: 6.12 USD
Availability: InStock

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Category SRAM Memory Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	2.62mm
Operating Voltage Range	1.65 V to 2.2 V, 2.2 V to 3.6 V, and
Length	23.62mm
Model	CY7C1049GN30-10VXIT
Width	10.29mm
Mount Type	Surface
Series	CY7C1049G
Maximum Operating Temperature	85°C
Package Type	SOJ
Minimum Operating Temperature	-40°C
Memory size	4096kB
Pin Count	36
Maximum Supply Voltage	3.6V
Minimum Supply Voltage	2.2V
Supply Current	45mA
Maximum Clock Frequency	1MHz
Organisation	512 k x 8 Bit
Number of Bits per Word	16
Maximum Random Access Time	10ns
Number of Words	512K
Timing Type	Asynchronous

Key Features

High-speed asynchronous SRAM with a maximum random access time of 10 ns.
Memory organization of 512K words by 8 bits with 16 bits per word.
Operating voltage range from 2.2 V to 3.6 V with surface mount construction.
Low active current of 38 mA typical and standby current of 6 mA typical for energy efficiency.
Operating temperature range from -40°C to 85°C suitable for varied environments.
Package dimensions of 23.62 mm length, 10.29 mm width, and 2.62 mm height with 36 pins.
Embedded ECC technology for single-bit error correction ensuring data integrity.
TTL-compatible inputs and outputs supporting robust interfacing.

Product Description

The Infineon CY7C1049GN30-10VXIT is a high-performance CMOS fast static RAM device with embedded error correction code (ECC) designed for reliable data storage applications. This SRAM features a memory size of 4096 kB organized as 512K x 8-bit with 16 bits per word, housed in a compact SOJ (Small Outline J-lead) surface mount package with 36 pins.

It operates asynchronously with a maximum random access time of 10 nanoseconds and supports a maximum clock frequency of 1 MHz, making it suitable for high-speed memory applications.

The device functions across a broad operating voltage range from 2.2 V to 3.6 V and maintains low power consumption with typical active current (ICC) of 38 mA and standby current (ISB2) of 6 mA, enhancing energy efficiency in embedded systems.

Designed for use in industrial and automotive electronics, the product withstands operating temperatures from -40°C to 85°C, ensuring robustness in harsh environments. Embedded ECC provides automatic single-bit error correction, improving data reliability critical for mission-critical applications.

Its TTL-compatible inputs and outputs allow easy integration into standard logic systems. Physical dimensions include a length of 23.62 mm, width of 10.29 mm, and height of 2.62 mm, fitting compact PCB layouts. This semiconductor component is ideal for applications requiring fast, reliable SRAM memory with ECC for enhanced data integrity and low power operation.

High-speed asynchronous SRAM with 10 ns access time. Capacity of 4096 kB organized as 512K x 8 bits. Embedded single-bit error correction code (ECC). TTL-compatible digital interface. Operating voltage from 2.2 V to 3.6 V.

Low power consumption with 38 mA active and 6 mA standby current. Surface mount SOJ package with 36 pins for space-saving design. Operating temperature range from -40°C to 85°C. Maximum clock frequency of 1 MHz. Suitable for industrial and automotive electronics memory solutions.

Explore the range of Semiconductors and SRAM Memory products from Infineon at EnvMart for your embedded and industrial electronics projects.