Winbond SLC NAND 2 GB Parallel Flash Memory 63-Pin VFBGA W29N02GVBIAA

Winbond W29N02GVBIAA is a Single-Level Cell (SLC) NAND Flash Memory with a capacity of 2 GB and a 63-pin VFBGA package, designed for parallel flash memory applications. It operates with a voltage range of 2.7V to 3.6V and supports a wide industrial operating temperature range from -40°C to 85°C, making it suitable for demanding environments in industrial, electronics manufacturing, and embedded systems.

This memory device is organized as 256M x 8 bits, providing a bus width of x8 and optimized for high performance and endurance. It boasts high endurance with 100,000 erase/program cycles and data retention of 10 years, ensuring reliability for critical memory storage applications.

The W29N02GVBIAA offers fast read performance with a maximum random read access time of 25μs and sequential read cycles of 25ns. Program and erase times are efficient at typical 250μs for page program and 2ms for block erase, facilitating rapid data management.

Its compact physical dimensions of 11.1mm length, 9.1mm width, and 600μm height enable space-saving designs on printed circuit boards. The low power consumption modes include a 25mA typical read current, 25mA program/erase current, and a minimal 10μA in CMOS standby, supporting energy-efficient operation.

The product supports standard NAN-D command sets as well as additional features such as Sequential Cache Read, Copy Back, and Two-plane operation, enhancing utility in complex memory use cases.

This Flash Memory is ideal for usage in industrial electronics, embedded applications, communications equipment, and other commercial electronic products requiring high reliability and performance memory solutions.

Memory Size: 2GB, SLC NAND technology. Interface Type: Parallel, 63-Pin VFBGA package. Operating Voltage: 2.7V to 3.6V supply range. Operating Temperature: Industrial range -40°C to 85°C. Endurance: 100,000 erase/program cycles, 10 years data retention.

Performance: 25μs random read access, 25ns sequential read cycle. Power: Low power CMOS standby mode at 10μA typical. Package Dimensions: 11.1 mm x 9.1 mm x 600 μm. Discover more in the Electronics & Electricals / Semiconductor / Flash Memory category on EnvMart, your trusted source for industrial electronic components.