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Microchip Split Gate 2 MB Parallel Flash Memory 32-Pin PLCC SST39SF020A-70-4C-NHE

Category Flash Memory Brand Microchip Condition New

Specifications

Country of Origin India
Brand Microchip
Height 2.84mm
Length 14.05mm
Cell Type Split Gate
Model SST39SF020A-70-4C-NHE
Width 349.25mm
Mount Type Surface
Series SST39SF020A
Maximum Operating Temperature 70°C
Package Type PLCC
Minimum Operating Temperature 0°C
Memory size 2MB
Interface Type Parallel
Pin Count 32
Maximum Supply Voltage 5.5V
Minimum Supply Voltage 4.5V
Supply Current 25mA
Organisation 256k x 8 Bit
Number of Bits per Word 8
Maximum Random Access Time 70ns
Number of Words 256K
Timing Type Asynchronous
Chip-Erase Time 70 MS (typical)
Microchip 2MB Parallel Flash Memory 32-Pin PLCC, SST39SF020A-70-4I-NHEBrand Microchip

Key Features

  • Memory size of 2 MB with 256k x 8 bit organization.
  • Split gate cell architecture for durable operation.
  • Operates with supply voltages ranging from 4.5V to 5.5V.
  • Maximum random access time of 70 nanoseconds for fast data reads.
  • Temperature range suitability from 0°C to 70°C for standard industrial use.
  • Asynchronous timing type allows flexible interfacing in parallel memory applications.
  • Low power consumption with typical supply current of 25 mA.
  • Package type is PLCC with 32 pins designed for surface mount technology.

Product Description

Microchip SST39SF020A-70-4C-NHE is a Split Gate 2 MB Parallel Flash Memory device offered in a 32-pin PLCC package designed for surface mount applications. With a memory size of 2 MB organized as 256k x 8 bits, this device supports a supply voltage range of 4.5V to 5.5V and operates asynchronously, allowing it to interface efficiently with various electronic systems.

This flash memory IC features split gate architecture that enables high endurance with up to 100,000 write/erase cycles. It provides quick access times of up to 70 ns and low power consumption, making it suitable for embedded and industrial applications requiring reliable non-volatile memory.

The device includes uniform 4 Kbyte sector erase capability with typical sector erase times of 18 ms and a chip erase time of approximately 70 ms. Byte program time is around 14 µs allowing fast rewriting.

Operating temperature range from 0°C to 70°C makes it suitable for commercial and industrial environments. This memory IC complies with JEDEC Flash EEPROM pinouts and command sets, ensuring compatibility with standard electronic design practices.

Memory size of 2 MB organized as 256k x 8 bits. Split gate cell type architecture for durability and endurance. Asynchronous timing and parallel interface for flexible system integration. Low power consumption at 25 mA typical supply current.

Operating temperature from 0°C to 70°C. 32-Pin PLCC package for surface mount technology. Typical chip erase time of 70 ms and byte program time of 14 µs. Automatic internal VPP generation and write timing. Endurance of 100,000 write/erase cycles (typical).

Standard JEDEC compliance for command sets and pinouts.

This Microchip Flash Memory is ideal for applications in industrial electronics, embedded systems, telecommunications, and consumer electronics where reliable and fast non-volatile memory is required. It supports easy integration into printed circuit boards via its PLCC package.

Explore more electronics components and semiconductor devices from Microchip and related categories at EnvMart to support your design and manufacturing needs.

Microchip Split Gate 2 MB Parallel Flash Memory 32-Pin PLCC SST39SF020A-70-4C-NHE
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Frequently Asked Questions

The memory size of this device is 2 MB, organized as 256k x 8 bits.

The maximum random access time for this model is 70 nanoseconds.

It operates with a supply voltage range of 4.5V to 5.5V.

The typical supply current for this device is 25 mA.

The operating temperature range is from 0°C to 70°C.

It comes in a 32-pin PLCC package designed for surface mount technology.

This flash memory can endure up to 100,000 write/erase cycles.

The typical chip erase time is approximately 70 milliseconds.

The byte program time is around 14 microseconds.

It uses a parallel interface type for communication.

The cell type architecture is a split gate design.

Yes, it complies with JEDEC Flash EEPROM pinouts and command sets.

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