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Renesas Electronics MOSFET Gate Driver 2 Output 2 A 14V 8-Pin SOIC HIP2100IBZ
Specifications
| Country of Origin | China |
|---|---|
| Brand | Renesas Electronics |
| Height | 1.5mm |
| Length | 5mm |
| Model | HIP2100IBZ |
| Width | 4mm |
| Mount Type | Surface |
| Series | HIP2100 |
| Output Current | 2A |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Number of outputs | 2 |
| Rise Time | 500ns |
| Pin Count | 8 |
| Minimum Supply Voltage | 14V |
| Number of Drivers | 2 |
| Fall Time | 500ns |
| Driver Type | MOSFET |
| Renesas Electronics HIP2100IBZ, MOSFET 2, 2 A, 14V 8-Pin, SOICBrand | Renesas Electronics |
Key Features
- Delivers 2A output current for efficient MOSFET drive.
- Features dual outputs suitable for half bridge and full bridge configurations.
- Operates with a supply voltage of 14 volts for reliable performance.
- Packaged in a compact 8-pin SOIC surface mount package.
- Supports wide temperature range from -55°C to 150°C for industrial applications.
- Has fast switching with 500ns rise and fall times ensuring quick signal transitions.
- Made in China maintaining high manufacturing standards.
- Suitable for power management IC applications requiring high performance gate drivers.
Product Description
Renesas Electronics HIP2100IBZ is a high-performance MOSFET gate driver designed for power management applications. This device features 2 outputs delivering a maximum current of 2A, operating with a supply voltage of 14V. Packaged in an 8-pin SOIC surface mount form factor, it offers compact dimensions of 5mm length, 4mm width, and 1.5mm height. The gate driver is suitable for half bridge, full bridge, and three-phase driver configurations.
The device operates reliably across a broad temperature range from -55°C to 150°C, making it ideal for various industrial and commercial uses. It provides rapid signal switching with a rise time and fall time of 500ns each, ensuring efficient power control and low propagation delay.
Designed without automotive standards, it is optimized for power management IC roles within semiconductor applications. 2 output channels delivering 2A current for efficient MOSFET switching. Fast rise and fall times of 500ns for minimizing switching losses.
Wide operating temperature range from -55°C to 150°C suitable for harsh environments. Compact 8-pin SOIC package suitable for space-constrained boards. Surface mount design enables automated and reliable assembly processes.
High-performance driver for half bridge, full bridge, and three-phase configurations. Manufactured in China under strict quality guidelines.
This MOSFET gate driver is ideal for use in industrial automation, power management circuits, and electronic control modules where efficient and reliable MOSFET driving is critical. Its robust temperature tolerance and quick switching characteristics make it a dependable choice for demanding applications.
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Frequently Asked Questions
This model delivers an output current of 2A, making it suitable for efficient MOSFET driving applications.
The HIP2100IBZ operates with a minimum supply voltage of 14V, ensuring reliable performance in power management applications.
It is packaged in an 8-pin SOIC format with dimensions of 5mm in length, 4mm in width, and 1.5mm in height.
The rise time and fall time for this model are both 500ns, allowing for rapid signal transitions and efficient power control.
This gate driver operates reliably across a wide temperature range from -55°C to 150°C, suitable for various industrial applications.
This model features 2 outputs, making it suitable for half bridge and full bridge configurations.
It supports surface mounting, which is ideal for space-constrained boards and automated assembly processes.
This MOSFET gate driver is ideal for use in industrial automation, power management circuits, and electronic control modules.
This model has a pin count of 8, conforming to the SOIC package specifications.
It is classified as a MOSFET driver, designed specifically for efficient MOSFET switching in power management applications.
This model is manufactured in China, adhering to high manufacturing standards.
It supports half bridge, full bridge, and three-phase driver configurations, providing versatility in power management applications.
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