STMicroelectronics MDmesh M2 N-Channel MOSFET, 600 V, 12 A, 110 W, 3-Pin TO-252 STD16N60M2

STMicroelectronics STD16N60M2 is a high-voltage MDmesh™ M2 series N-Channel MOSFET designed for demanding power electronics applications. It supports a maximum continuous drain current of 12 A and a drain-source voltage rating of 600 V, making it suitable for high power switching and amplification.

The device is built with enhancement mode channel technology that ensures efficient and reliable operation. Its gate charge of 19 nanocoulombs enables fast switching speeds, which is critical in resonant-type switching supplies like LLC converters.

This MOSFET comes in a surface mount 3-pin TO-252 package, allowing easy integration onto PCBs for space-constrained industrial, laboratory, and commercial electronics assemblies.

Additional features include a low maximum drain-source resistance of 320 milliohms to minimize conduction losses and a maximum power dissipation of 110 W enabling robust thermal handling.

It operates safely across a wide temperature range from -55°C to 150°C and supports a gate-source voltage range of -25 V to +25 V, ensuring versatility under varied operating conditions.

Compact physical dimensions (length 6.6 mm, width 6.2 mm, height 2.4 mm) contribute to efficient board layout in professional electronics manufacturing. Operates with enhancement mode channel type for efficient switching.

Features low gate charge of 19nC for high-frequency applications. Maximum drain source resistance of 320 milliohms to reduce power loss. Compact 3-pin TO-252 surface mount package for efficient PCB integration. Wide operating temperature from -55°C to 150°C for reliable performance.

Gate source voltage rating of ±25 V for robust gate control. Power dissipation capacity of 110 W for demanding applications. Ideal for resonant-type switching supplies such as LLC converters.

This MOSFET is broadly utilized in industrial, manufacturing, HVAC, and commercial electronics applications where reliability, efficiency, and compact size are critical. It is a proven component for power conversion and energy-efficient Electronics design projects.

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