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Microchip Split Gate 64 MB SPI Flash Memory 8-Pin SOIJ SST26VF064B-104I/SM

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Microchip Split Gate 64 MB SPI Flash Memory 8-Pin SOIJ SST26VF064B-104I/SM

Name: Microchip Split Gate 64 MB SPI Flash Memory 8-Pin SOIJ SST26VF064B-104I/SM
Brand: Microchip
SKU: 383075
Price: 5.82 USD
Availability: InStock

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Category Flash Memory Brand Microchip Condition New

Specifications

Country of Origin	India
Brand	Microchip
Height	1.98mm
Length	5.26mm
Cell Type	Split Gate
Model	SST26VF064B-104I/SM
Width	5.25mm
Mount Type	Surface
Series	SST26VF064B
Maximum Operating Temperature	85°C
Package Type	SOIJ
Minimum Operating Temperature	-40°C
Memory size	64MB
Interface Type	SPI
Pin Count	8
Automotive Standard	AEC-Q100
Maximum Supply Voltage	3.6V
Minimum Supply Voltage	2.7V
Supply Current	20mA
Maximum Clock Frequency	104MHz
Organisation	8M x 8 Bit
Number of Bits per Word	8
Maximum Random Access Time	3ns
Number of Words	8K

Key Features

The memory operates up to 104 MHz clock frequency.
Features the Serial Quad I/O (SQI) Interface for fast data transfer.
Active read supply current is typically 15 mA at max speed.
Supports sector/block erase in 18 ms and full chip erase in 35 ms.
Operates reliably between -40°C and 85°C temperature range.
Compact surface mount SOIJ package with 8 pins and dimensions 5.26 mm × 5.25 mm × 1.98 mm.
Supply voltage range from 2.7 V to 3.6 V.
Meets automotive standard AEC-Q100 for robust use.

Product Description

Microchip SST26VF064B-104I/SM is a 64 MB SPI Flash Memory device featuring advanced Split Gate cell technology designed for efficient, low-power, and high-speed memory applications.

With a Serial Quad I/O (SQI) interface, this 8-pin SOIJ package device supports a maximum clock frequency of 104 MHz enabling fast data throughput and low latency execution in embedded systems.

The memory supports a wide temperature operating range from -40°C to 85°C, making it suitable for industrial and automotive applications. It complies with the AEC-Q100 automotive standard ensuring reliability and robustness under harsh conditions.

This chip supports flexible erase operations, offering fast sector or block erase times of approximately 18 ms and a typical full chip erase time of 35 ms, enhancing programming efficiency.

The device requires a supply voltage between 2.7 V and 3.6 V, with a typical active read current consumption of 15 mA and ultra-low standby current of 15 μA to optimize power management in battery-operated and low-power systems.

This compact memory IC is surface-mounted in an 8-pin SOIJ package measuring 5.26 mm length, 5.25 mm width, and 1.98 mm height, fitting small form-factor applications. The memory allows x1/x2/x4 SPI protocol compatibility for flexible interface options.

The SuperFlash® technology grants faster erase and programming compared to traditional flash memory. Suitable for various industrial sectors including automotive electronics, consumer devices, and embedded control systems.

This Microchip Flash Memory model SST26VF064B-104I/SM is ideal for users requiring high-speed, reliable non-volatile memory in a compact package. Explore our comprehensive collection of semiconductor memory solutions and Microchip products at EnvMart for your next electronics project.