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Skyworks Solutions Inc MOSFET Gate Driver 1 Output 4 A 6-Pin 30V Surface Mount AEC-Q100 Si8261ABD-C-IS
Specifications
| Country of Origin | India |
|---|---|
| Brand | Skyworks Solutions Inc |
| Height | 2.05mm |
| Length | 4.58mm |
| Model | Si8261ABD-C-IS |
| Width | 11.5mm |
| Mount Type | Surface |
| Series | Si826x |
| Output Current | 4A |
| Maximum Operating Temperature | 125°C |
| Package Type | SDIP |
| Minimum Operating Temperature | -40°C |
| Number of outputs | 5 |
| Rise Time | 5.5ns |
| Pin Count | 6 |
| Automotive Standard | AEC-Q100 |
| Minimum Supply Voltage | 30V |
| Number of Drivers | 1 |
| Fall Time | 8.5ns |
| Driver Type | MOSFET |
Key Features
- Designed for driving power MOSFETs and IGBTs in inverter and motor control applications.
- Features Silicon Labs proprietary silicon isolation technology with 5.0 kV RMS isolation.
- Provides fast switching with 5.5ns rise time and 8.5ns fall time.
- Operates within an extended temperature range from -40°C to 125°C suitable for automotive standards.
- Compact surface mount 6-pin SDIP package measuring 4.58mm length and 11.5mm width.
- Complies with automotive standard AEC-Q100 ensuring reliability in harsh conditions.
- Single-driver output supports 30V supply voltage for demanding power management IC applications.
Product Description
Skyworks Solutions Inc Si8261ABD-C-IS is a high-performance MOSFET gate driver designed for efficient switching in power electronics applications. Featuring a single output with a peak current capability of 4A, this device operates with a 30V supply voltage in a compact 6-pin SDIP package. It is specifically engineered for driving power MOSFETs and IGBTs, making it ideal for a wide range of inverter and motor control systems across industrial and automotive sectors.
Utilizing Silicon Labs' proprietary silicon isolation technology, the Si8261ABD-C-IS supports an isolation voltage of up to 5.0 kV RMS, providing superior performance, reduced temperature and age variations, and excellent common-mode noise rejection compared to traditional optocoupler-based gate drivers. Its fast switching characteristics include a rise time of 5.5ns and fall time of 8.5ns, ensuring efficient power management.
The gate driver operates reliably across a broad temperature range from -40°C to 125°C, meeting the stringent requirements of automotive applications and is certified to automotive standard AEC-Q100. The compact surface mount package measures 4.58mm in length, 11.5mm in width, and 2.05mm in height, allowing integration into space-constrained PCB designs.
This product is widely suited for applications in industrial motor drives, renewable energy systems, power conversion, HVAC controls, and automotive electronic controls where robust, high-speed isolated gate driving is essential. It enables enhanced performance and durability in demanding electrical environments.
Designed for driving power MOSFETs and IGBTs in inverter and motor control applications. Proprietary silicon isolation technology provides 5.0 kV RMS isolation voltage. Fast switching with 5.5ns rise time and 8.5ns fall time.
Wide operating temperature range from -40°C to 125°C. Automotive standard compliance AEC-Q100. Compact 6-pin SDIP surface mount package. Single output driver with 4A output current and 30V supply voltage.
Explore the range of MOSFET Gate Drivers by Skyworks Solutions Inc on EnvMart for advanced power management IC solutions tailored to diverse industrial and automotive applications.
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Frequently Asked Questions
This model has a peak current capability of 4A, suitable for driving power MOSFETs and IGBTs.
It operates with a minimum supply voltage of 30V, making it suitable for demanding power management applications.
The rise time is 5.5ns and the fall time is 8.5ns, ensuring efficient switching performance.
It operates reliably within a temperature range of -40°C to 125°C, meeting automotive standards.
This model comes in a compact 6-pin SDIP package, measuring 4.58mm in length, 11.5mm in width, and 2.05mm in height.
This model features a single output driver designed for efficient gate driving.
It supports an isolation voltage of up to 5.0 kV RMS, utilizing proprietary silicon isolation technology.
It is suitable for applications in industrial motor drives, renewable energy systems, and automotive electronic controls.
This model is classified as a MOSFET driver, specifically designed for driving power MOSFETs and IGBTs.
The fast switching characteristics, with a rise time of 5.5ns and fall time of 8.5ns, enhance performance and efficiency in power management applications.
It utilizes a surface mount type, allowing for integration into space-constrained PCB designs.
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