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onsemi NPN 2-Darlington Transistor 300mA 30V 3-Pin SOT-23 MMBTA14LT1G

Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.01mm
Length 3.04mm
Model MMBTA14LT1G
Mount Type Surface
Series MMBTA13LT1
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Continuous Collector Current Ic 300mA
Maximum Collector Emitter Voltage Vceo 30V
Number of Elements per Chip 2
Minimum DC Current Gain hFE 5000
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V
Maximum Collector Base Voltage VCBO 30V
Maximum Collector Cut-off Current 100nA
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
onsemi 2 Darlington Transistor NPN, 300 mA 30 V HFE 5000, 3-Pin SOT-23

Key Features

  • Maximum continuous collector current of 300mA ensures reliable operation.
  • High current gain hFE of 5000 delivers excellent amplification.
  • Compact SOT-23 surface mount package with 3 pins for PCB integration.
  • Supports operating temperatures from -55°C to 150°C suitable for industrial use.
  • Maximum power dissipation rated at 300mW for efficient performance.
  • NPN transistor polarity with two elements per chip forming the Darlington pair.
  • Maximum collector-emitter voltage of 30V and saturation voltage of 1.5V.
  • Meets automotive standard AEC-Q101 for enhanced reliability.

Product Description

onsemi MMBTA14LT1G is a NPN type 2 Darlington Transistor designed for use in electronic circuits requiring moderate current amplification up to 300mA and voltage handling up to 30V.

This transistor comes housed in the industry-standard SOT-23 3-pin surface mount package ideal for compact PCB layouts in industrial, automotive, and consumer electronics.

The device exhibits a high DC current gain (hFE) of up to 5000, allowing significant signal amplification with minimal input current. It supports a wide operating temperature range from -55°C to 150°C, making it suitable for harsh environments.

The maximum power dissipation of 300mW ensures safe operation within its electrical limits. As a Darlington pair, it contains two transistors integrated into a single chip to provide higher gain and faster switching capabilities.

This transistor complies with the automotive standard AEC-Q101, assuring quality and reliability for automotive and industrial electronics applications where stringent performance requirements apply.

Maximum continuous collector current of 300mA. Maximum collector-emitter voltage: 30V. Package type: SOT-23 surface mount. DC current gain (hFE) minimum 5000. Operating temperature range: -55°C to 150°C. Maximum power dissipation: 300mW.

Pin count: 3. Automotive standard: AEC-Q101.

This onsemi MMBTA14LT1G transistor is ideal for circuit designs requiring low power, compact size, and high gain semiconductor switching devices, used in industrial control systems, automotive electronics, signal amplification, and power management circuits.

Explore a wide range of semiconductor devices and related components in the Discrete Semiconductors section at EnvMart for your electronics manufacturing and design needs.

onsemi NPN 2-Darlington Transistor 300mA 30V 3-Pin SOT-23 MMBTA14LT1G
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Frequently Asked Questions

The maximum continuous collector current for the MMBTA14LT1G is 300mA.

This model has a maximum collector-emitter voltage of 30V.

The minimum DC current gain (hFE) for the MMBTA14LT1G is 5000.

It supports an operating temperature range from -55°C to 150°C.

The MMBTA14LT1G comes in a SOT-23 surface mount package.

This transistor has a total of 3 pins.

The maximum power dissipation rated for the MMBTA14LT1G is 300mW.

It complies with the automotive standard AEC-Q101.

The maximum collector-emitter saturation voltage is 1.5V.

The country of origin for the MMBTA14LT1G is India.

It is an NPN type 2 Darlington transistor.

The maximum emitter-base voltage (VEBO) is 10V.

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