Microchip 4 kB Serial EEPROM 250 ns 8-Pin PDIP Serial-3 Wire 93C66B-I/P

Microchip 93C66B-I/P is a 4 kB serial EEPROM designed for reliable non-volatile memory storage in electronic systems. Featuring a maximum random access time of 250 ns, it ensures fast read and write operations within a robust 8-pin PDIP package.

This device operates with a 3-wire serial interface, enhancing straightforward interfacing with microcontrollers and other serial communication devices. It supports a clock frequency up to 2 MHz, facilitating swift data transfer and system integration.

The EEPROM is built with power-on/off data protection circuitry, automatic erase before write capability, and self-timed erase/write cycles, supporting up to 1,000,000 cycles for extended device endurance. Data retention is rated for over 200 years, making it ideal for critical data storage requirements in industrial, manufacturing, and embedded applications.

Operating temperature ranges from -40°C to 85°C, making it suitable for various harsh environments. Its supply voltage ranges from 4.5 V to 5.5 V, compatible with most standard electronic circuits.

The compact dimensions of 9.4 mm length, 6.35 mm width, and 3.3 mm height allow flexible PCB space utilization. The through-hole PDIP packaging type eases prototyping and assembly processes.

Offers 4 kB memory size for versatile use. Operates with a 3-wire serial interface for simple integration. Maximum clock frequency of 2 MHz for efficient data access. Designed for through-hole mounting in PDIP package type.

Operates within temperature range from -40°C to 85°C. Features automatic erase before write and power-on/off data protection circuitry. Supports 1,000,000 erase/write cycles ensuring durability. Data retention exceeds 200 years guaranteeing long-term reliability.

Compact dimensions with 9.4 mm length, 6.35 mm width, and 3.3 mm height. Supply voltage range from 4.5 V to 5.5 V for standard applications.

This EEPROM is ideal for applications in industrial control, instrumentation, communication equipment, and automotive electronics where reliable non-volatile memory is crucial. Its durable design meets the needs of environments requiring long data retention and high endurance cycles.

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