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ROHM Digital Transistor 50 V 100 mA Surface Mount SMT 3-Pin DTC123JKAT146
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 1.1mm |
| Length | 2.9mm |
| Model | DTC123JKAT146 |
| Width | 1.6mm |
| Mount Type | Surface |
| Series | DTC123J |
| Maximum Operating Temperature | 150°C |
| Package Type | SMT |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 100mA |
| Maximum Collector Emitter Voltage Vceo | 50V |
| Minimum DC Current Gain hFE | 80 |
| Transistor Polarity | NPN |
| Maximum Power Dissipation Pd | 200mW |
| Transistor Configuration | Single |
Key Features
- This digital transistor operates with a maximum collector-emitter voltage of 50 V.
- It supports a continuous collector current of up to 100 mA.
- The device features an integrated resistor, simplifying digital input drive circuits.
- The maximum power dissipation is rated at 200 mW ensuring safe operation within limits.
- This transistor has a minimum DC current gain (hFE) of 80, enhancing signal amplification.
- The compact SMT package measures 2.9 mm length, 1.6 mm width, and 1.1 mm height.
- It features a standard 3-pin configuration suitable for various PCB layouts.
- The transistor can operate reliably up to a maximum temperature of 150°C.
Product Description
ROHM DTC123JKAT146 digital transistor offers robust switching capabilities with a collector-emitter voltage up to 50 V and a continuous current capacity of 100 mA. It is packaged in a surface mount SMT format with a slim 3-pin form factor, perfectly suited for circuit board assembly.
This transistor integrates one or two resistors internally, allowing it to be driven directly from digital electronics without external resistor components. The NPN configuration provides efficient current amplification with a minimum DC gain (hFE) of 80.
The transistor's maximum power dissipation is 200 mW, ensuring reliable performance while operating temperatures can reach as high as 150°C, making it suitable for a broad range of industrial and electronic applications.
Packaged with the dimensions 2.9 mm (L) x 1.6 mm (W) x 1.1 mm (H), this digital transistor adapts well to space-constrained designs in electronics manufacturing. Maximum collector-emitter voltage of 50 V. Continuous collector current up to 100 mA.
Integrated bias resistors for direct digital drive. Power dissipation limit of 200 mW. Minimum DC current gain (hFE) of 80. Compact SMT 3-pin package. Operating temperature range up to 150°C. NPN transistor configuration.
Ideal for semiconductor applications in industrial and electronic devices. RoHS compliant for environmental safety.
This product is perfect for applications in electronic circuit design, automated equipment, communication devices, and power management where precise Digital Transistor components are required.
Explore more from ROHM and related semiconductor components in our Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum collector-emitter voltage for this digital transistor is 50 V.
This model supports a continuous collector current of up to 100 mA.
The maximum power dissipation is rated at 200 mW, ensuring safe operation within limits.
The compact SMT package measures 2.9 mm in length, 1.6 mm in width, and 1.1 mm in height.
It has a minimum DC current gain (hFE) of 80, enhancing signal amplification.
This transistor is packaged in a surface mount (SMT) format with a 3-pin configuration.
The DTC123JKAT146 can operate reliably at temperatures up to 150°C.
This model features an NPN transistor configuration.
Yes, it features integrated bias resistors, allowing it to be driven directly from digital electronics without external components.
This transistor is suitable for applications in electronic circuit design, automated equipment, communication devices, and power management.
The country of origin for this digital transistor is India.
This model belongs to the DTC123J series.
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