Toshiba N-Channel Field Effect Transistor, 180 mA, 20 V Enhancement Mode, 3-Pin VESM Package SSM3K35MFV(TPL3)

Toshiba SSM3K35MFV(TPL3) is a high-quality N-Channel Field Effect Transistor designed for efficient electronic component applications requiring reliable switching with low drain source voltage of 20 V and a continuous drain current capacity of 180 mA. It uses an enhancement channel mode to optimize power and performance in compact circuit designs.

Encased in a 3-pin VESM surface mount package, this transistor features a compact form factor with precise dimensions of 1.2 mm length, 800 μm width, and 500 μm height, making it ideal for modern, space-constrained PCB layouts.

The device supports a maximum gate source voltage range of -10 to +10 V and dissipates power up to 150 mW, ensuring it operates reliably over a wide temperature span from -55°C to 150°C, suitable for industrial electronics and harsh environments.

Enhanced channel mode for efficient transistor switching. Compact 3-pin VESM surface mount package. Maximum power dissipation of 150 mW. Wide operating temperature range from -55°C to 150°C. Maximum gate source voltage of -10 to +10 V.

Maximum drain source resistance of 20 Ω. Precise package dimensions: 1.2 mm length, 800 μm width, 500 μm height. Forward voltage of -0.9 V for optimized circuit operation. Manufactured in Japan ensuring high reliability.

This transistor is well-suited for industrial, electronic component assemblies, power management circuits, and other Discrete Semiconductor applications requiring reliable and efficient power switching and amplification.

Explore more Toshiba semiconductors and MOSFET transistors at EnvMart for your electronic and industrial component needs.