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STMicroelectronics 8 A PNP Power Transistor 80 V 20 W TO-252 Surface Mount MJD45H11T4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.38mm |
| Length | 6.7mm |
| Model | MJD45H11T4 |
| Width | 10.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | 0°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 80V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 80V |
| Maximum Power Dissipation Pd | 20W |
| Maximum DC Collector Current Idc | 8A |
| Transistor Configuration | Single |
| onsemi MJD45H11G PNP Transistor, -8 A, -80 V, 3-Pin DPAKBrand | onsemi |
Key Features
- This transistor is a PNP bipolar power transistor designed for surface mount applications.
- It offers a maximum collector current of 8 amperes suited for power switching and amplification.
- Maximum collector-emitter voltage rating is 80 volts for robust performance under high voltage.
- The device has a maximum power dissipation rating of 20 watts to ensure operational reliability.
- Its TO-252 form factor ensures compatibility with compact electronic boards.
- Operating temperature ranges from 0°C up to 150°C, supporting varied industrial environments.
- Minimum DC current gain (hFE) is 40, suitable for general purpose amplification tasks.
Product Description
STMicroelectronics MJD45H11T4 is a high-performance 8 A PNP power transistor housed in a TO-252 surface mount package. It supports an 80 V maximum collector-emitter voltage and dissipates up to 20 W power, making it ideal for robust power management in electronic circuits.
This transistor features a single transistor configuration optimized for surface mounting, designed to handle demanding conditions across industrial and commercial applications. The device operates reliably within a temperature range of 0°C to 150°C, ensuring long-term stability even in heated environments.
Its electrical characteristics include a minimum DC current gain of 40 and collector-base voltage tolerance of 80 V, supporting diverse applications such as power amplification, switching, and control modules in automotive, manufacturing systems, and power supply designs.
The compact dimensions of 6.7 mm length, 10.1 mm width, and 2.38 mm height facilitate integration into space-constrained boards, making it suitable for modern electronic systems. This transistor is a PNP bipolar power transistor designed for surface mount applications.
Maximum collector current is 8 A for handling high current loads. Maximum collector-emitter voltage rating of 80 V supports high voltage circuits. Rated power dissipation up to 20 W ensures effective heat management. The TO-252 package type ensures easy PCB mounting compatibility.
Operating temperature range from 0°C to 150°C accommodates various environmental conditions. Minimum DC current gain (hFE) is 40, suitable for amplification.
STMicroelectronics provides reliable and durable bipolar transistors suited for discrete semiconductor applications, especially in power electronics and industrial equipment. The MJD45H11T4 is a recommended choice for engineers requiring efficient power transistors in compact surface mount packages.
Explore the full range of STMicroelectronics Power Transistors and bipolar transistors for diverse electronic component needs at EnvMart.
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Frequently Asked Questions
The maximum collector current for this model is 8 amperes, making it suitable for handling high current loads in power applications.
This transistor has a maximum collector-emitter voltage rating of 80 volts, which supports its use in high voltage circuits.
The MJD45H11T4 can dissipate up to 20 watts of power, ensuring effective heat management during operation.
It operates within a temperature range of 0°C to 150°C, accommodating various environmental conditions.
This model comes in a TO-252 surface mount package, which is designed for easy PCB mounting.
The minimum DC current gain (hFE) for this transistor is 40, making it suitable for general-purpose amplification tasks.
It has a maximum collector-base voltage tolerance of 80 V, which supports its robustness in various applications.
The dimensions are 6.7 mm in length, 10.1 mm in width, and 2.38 mm in height, allowing for integration into compact electronic boards.
This model features a single transistor configuration, optimized for surface mount applications.
It is a PNP bipolar power transistor, designed specifically for power switching and amplification.
This transistor has a pin count of 3, which is typical for discrete semiconductor applications.
The maximum emitter-base voltage for this model is 5 volts, ensuring operational reliability in various circuits.
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