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STMicroelectronics Transistor 10 A NPN 60 V 3-Pin DPAK TO-252 Surface Mount MJD3055T4

Category Bipolar Transistors Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 2.38mm
Length 6.7mm
Model MJD3055T4
Width 10.4mm
Mount Type Surface
Series MJD3055
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature 0°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 5
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 70V
Maximum Power Dissipation Pd 20W
Maximum DC Collector Current Idc 10A
Transistor Configuration Single
Maximum Transition Frequency ft 2MHz

Key Features

  • Maximum DC collector current rating of 10 amperes ensures high current capacity and durability.
  • Collector-emitter voltage of 60 volts suitable for medium power applications.
  • Surface mount TO-252 package with three pins for easy PCB integration.
  • Maximum power dissipation of 20 watts for reliable thermal management.
  • NPN transistor polarity designed for switching and amplification applications.
  • Collector base voltage maximum of 70 volts for electrical safety margin.
  • Operating temperature range from 0°C up to 150°C supports various environmental conditions.
  • Minimum DC current gain (hFE) of 5 ensures adequate amplification performance.

Product Description

STMicroelectronics MJD3055T4 transistor is a robust NPN bipolar power transistor rated for a maximum DC collector current of 10 amperes and a collector-emitter voltage up to 60 volts. It is packaged in a TO-252 DPAK surface mount configuration with three pins, facilitating integration into contemporary PCB designs.

This transistor features a maximum power dissipation of 20 watts, supporting reliable operation in power regulation, switching, and amplification circuits commonly found in industrial electronics, automotive controls, and consumer devices.

Designed with a minimum DC current gain (hFE) of 5 and maximum transition frequency of 2 MHz, it is suitable for medium frequency applications requiring stable gain and efficiency. The transistor's polarity is NPN, and it offers maximum collector base and emitter base voltage ratings of 70 V and 5 V respectively, providing a strong electrical safety margin.

Operating safely across a temperature range of 0°C to 150°C, the MJD3055T4 is suitable for diverse environmental conditions and industrial settings.

Its compact TO-252 package dimensions of 6.7 mm length, 10.4 mm width, and 2.38 mm height enable space-efficient circuit design. The surface mount type allows modern automated assembly with enhanced production efficiency.

High current rating and power dissipation for demanding power applications. Robust thermal and electrical limits for safe, reliable operation. Industry-standard DPAK surface mount package for PCB assembly. Wide operating temperature range enhances application versatility.

Appropriate for use in power amplifiers, switching regulators, motor controls, and other electronics requiring durable bipolar transistors.

The STMicroelectronics MJD3055T4 is part of the MJD3055 series, offering proven quality and consistent performance within a broad range of semiconductor applications. It is ideal for use across industrial electronics, automotive systems, power supply circuits, and discrete semiconductor applications.

Explore the comprehensive selection of Bipolar Transistors and related components at EnvMart to find complementary parts for your electronics projects or manufacturing needs.

STMicroelectronics Transistor 10 A NPN 60 V 3-Pin DPAK TO-252 Surface Mount MJD3055T4
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Frequently Asked Questions

The maximum DC collector current rating of the MJD3055T4 transistor is 10 amperes, ensuring high current capacity for various applications.

This model has a collector-emitter voltage rating of 60 volts, making it suitable for medium power applications.

The maximum power dissipation for this transistor is 20 watts, which supports reliable thermal management during operation.

The MJD3055T4 operates safely within a temperature range of 0°C to 150°C, accommodating various environmental conditions.

The TO-252 package of this transistor measures 6.7 mm in length, 10.4 mm in width, and 2.38 mm in height.

The minimum DC current gain (hFE) of the MJD3055T4 is 5, which ensures adequate amplification performance.

This transistor has a maximum collector base voltage rating of 70 volts, providing an electrical safety margin.

The MJD3055T4 features an NPN transistor polarity, making it suitable for switching and amplification applications.

This model is appropriate for use in power amplifiers, switching regulators, motor controls, and other electronic applications requiring durable bipolar transistors.

The TO-252 package of the MJD3055T4 has three pins, facilitating easy PCB integration.

The maximum transition frequency of the MJD3055T4 is 2 MHz, suitable for medium frequency applications.

The MJD3055T4 transistor is manufactured in India.

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