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Infineon IPL60R N-Channel MOSFET 33 A 600 V Enhancement 5-Pin ThinPAK IPL60R075CFD7AUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 8.1mm |
| Model | IPL60R075CFD7AUMA1 |
| Width | 8.1mm |
| Mount Type | Surface |
| Series | IPL60R |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK |
| Minimum Operating Temperature | -40°C |
| Pin Count | 5 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 33A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 75mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 189W |
| Typical Gate Charge Qg @ Vgs | 67nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Features enhancement mode operation for efficient switching performance.
- Maximum continuous drain current of 33 amperes.
- Maximum drain-source voltage of 600 volts supports high-voltage applications.
- Low maximum drain-source resistance of 75 milliohms reduces conduction losses.
- High power dissipation capability of 189 watts ensures durability under heavy load.
- Typical gate charge of 67 nC enables fast switching speeds.
- Maximum gate-source voltage rating of 20 volts for reliable gate control.
- Wide operating temperature range from -40°C to 150°C.
Product Description
The Infineon IPL60R075CFD7AUMA1 is a high-performance N-Channel MOSFET from the IPL60R series designed for power electronics applications requiring excellent efficiency and reliability. It operates in enhancement mode with a maximum continuous drain current of 33 A and drain-source voltage rating of 600 V, making it ideal for switching and amplification in high-voltage circuits.
Featuring ThinPAK 5-pin packaging, this MOSFET ensures compact integration on surface mount PCBs. It offers a low maximum drain-source resistance (Rds(on)) of 75 milliohms, which minimizes conduction losses and heat generation during operation. The typical gate charge of 67 nC facilitates rapid switching transitions, increasing performance in applications such as power supplies, motor control, and industrial automation.
The device supports a maximum power dissipation of 189 W and can reliably operate in harsh environments with a temperature range from -40°C up to 150°C. Its forward voltage drop of approximately 1 V on the integrated body diode supports efficient freewheeling performance. The MOSFET lacks formal standards or automotive approvals but excels in ruggedness with ultra-fast body diode characteristics and proprietary CoolMOS™ CFD7 technology to reduce reverse recovery losses.
Industrial use cases include high-voltage DC-DC converters, power management modules, and demanding electronic manufacturing applications. The device belongs to the CoolMOS™ 7 series, featuring advanced superjunction technology and integrated fast body diode to deliver best-in-class performance and efficiency.
Enhancement mode N-Channel MOSFET for superior switching. Maximum drain current of 33 A supports substantial load currents. Maximum voltage rating of 600 V for high-voltage designs. ThinPAK 5-Pin surface mount package for compact assembly.
Low Rds(on) of 75 mΩ to reduce power losses. High power dissipation rating of 189 W ensures thermal robustness. Wide operating temperature range from -40°C to +150°C. Integrated fast body diode minimizes reverse recovery losses.
Compact dimensions optimize PCB space and performance. Suitable for industrial, power management, and automation applications. Discover the Infineon IPL60R MOSFET and explore related semiconductor components on EnvMart for reliable and efficient power solutions.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon IPL60R075CFD7AUMA1 is 33 amperes.
This model has a maximum drain-source voltage rating of 600 volts, suitable for high-voltage applications.
The IPL60R075CFD7AUMA1 comes in a ThinPAK package type and has a pin count of 5.
It has a maximum power dissipation capability of 189 watts, ensuring durability under heavy load conditions.
The typical gate charge for this MOSFET is 67 nC, allowing for fast switching speeds.
This model operates within a temperature range of -40°C to 150°C, making it suitable for harsh environments.
The maximum gate-source voltage rating for this MOSFET is 20 volts, ensuring reliable gate control.
The maximum drain-source resistance (Rds(on)) is 75 milliohms, which helps reduce conduction losses.
This MOSFET is suitable for applications such as high-voltage DC-DC converters, power management modules, and industrial automation.
The forward voltage drop of the integrated body diode is approximately 1 volt, supporting efficient freewheeling performance.
It features proprietary CoolMOS™ CFD7 technology, which reduces reverse recovery losses and enhances overall efficiency.
The country of origin for this MOSFET is India.
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