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Infineon 1200 V 8 A Silicon Carbide Schottky Diode 3-Pin TO-247 IDM08G120C5XTMA1

Category Semiconductor Diode Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 10.4mm
Length 6.65mm
Model IDM08G120C5XTMA1
Width 2.35mm
Mount Type SMD
Series 5th Generation thinQ!TM
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Standards/Approvals JEDEC1)
Pin Count 3
Maximum Continuous Forward Current If 8A
Peak Reverse Repetitive Voltage Vrrm 1200V
Diode Configuration Silicon Carbide Schottky Diode
Rectifier Type SiC Schottky
Peak Non-Repetitive Forward Surge Current Ifsm 70A
Maximum Forward Voltage Vf 2.85V

Key Features

  • This diode features a maximum continuous forward current of 8 amperes.
  • It supports a peak reverse repetitive voltage of 1200 volts.
  • The device uses 5th Generation thinQ! technology for superior performance.
  • With a low maximum forward voltage of 2.85 volts, it ensures best-in-class efficiency.
  • It has excellent surge current capability with a peak non-repetitive forward surge current of 70 amperes.
  • The diode operates within temperature ranges from -55°C to 175°C.
  • Its compact dimensions are 6.65 mm length, 10.4 mm height, and 2.35 mm width.
  • The product is designed to JEDEC standards and has a 3-pin TO-247 mount type.

Product Description

Infineon IDM08G120C5XTMA1 is a state-of-the-art Silicon Carbide (SiC) Schottky diode designed for demanding electronic applications requiring high voltage and current handling capabilities. This diode supports a maximum continuous forward current of 8 A and a peak reverse repetitive voltage of 1200 V, making it suitable for power electronics, industrial, automotive, and renewable energy applications.

Utilizing Infineon's 5th Generation thinQ! technology, this diode offers a low forward voltage of 2.85 V which contributes to high efficiency and reduced power losses in systems. The diode's construction ensures no reverse recovery charge and a mild positive temperature coefficient, enhancing system reliability and thermal management in various operating conditions. With a peak non-repetitive forward surge current rating of 70 A, it offers excellent surge current capability for demanding transient conditions.

This device operates reliably in extreme environments with an operating temperature range from -55°C to 175°C. Its TO-247 3-pin package aids in efficient heat dissipation and ease of mounting in power modules.

Typical applications include industrial motor drives, power supplies, solar inverters, and battery management systems. The diode complies with JEDEC standards, assuring quality and performance consistency.

Maximum continuous forward current of 8 amperes ensures suitability for moderate power applications. High blocking voltage of 1200 volts provides robustness in high voltage circuits. Advanced 5th Generation thinQ! technology delivers improved efficiency and reliability.

Low forward voltage drop reduces conduction losses and enhances thermal performance. Excellent surge current capacity at 70 amperes supports high transient loads. Wide operating temperature range of -55°C to 175°C for harsh environments.

Compact TO-247 3-pin package for easy integration and effective heat dissipation. Complies with JEDEC standards ensuring quality and reliability.

This Silicon Carbide Schottky diode from Infineon is optimized for demanding power electronics tasks in industrial, automotive, and renewable sectors. Its robust specifications make it an ideal choice for efficiency-focused applications requiring reliability and compact form factor. Discover more semiconductor components and power diodes on EnvMart to suit your industrial and commercial needs.

Explore more products in our Semiconductor Diode category.

Infineon 1200 V 8 A Silicon Carbide Schottky Diode 3-Pin TO-247 IDM08G120C5XTMA1
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Frequently Asked Questions

The maximum continuous forward current of this diode is 8 amperes.

This model supports a peak reverse repetitive voltage of 1200 volts.

The diode has a low maximum forward voltage drop of 2.85 volts.

It has a peak non-repetitive forward surge current rating of 70 amperes.

The diode operates within a temperature range from -55°C to 175°C.

This diode is packaged in a TO-247 3-pin configuration.

It utilizes Infineon's 5th Generation thinQ! technology for improved performance.

The diode complies with JEDEC standards, ensuring quality and reliability.

The dimensions of the diode are 6.65 mm in length, 10.4 mm in height, and 2.35 mm in width.

Typical applications include industrial motor drives, power supplies, solar inverters, and battery management systems.

This model has a pin count of 3.

The diode configuration type is Silicon Carbide Schottky Diode.

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