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Microchip 256 kB Parallel EEPROM 150 ns 28-Pin SOIC AT28C256-15SU

Category EEPROM Brand Microchip Condition New

Specifications

Country of Origin Taiwan
Brand Microchip
Length 18.1mm
Model AT28C256-15SU
Width 7.6mm
Mount Type Surface
Series AT28C256
Maximum Operating Temperature 85°C
Package Type SOIC
Minimum Operating Temperature -40°C
Memory size 256kB
Interface Type Parallel
Pin Count 28
Maximum Supply Voltage 5.5V
Minimum Supply Voltage 4.5V
Supply Current 50mA
Maximum Clock Frequency 5MHz
Organisation 32K x 8 Bit
Number of Bits per Word 8
Maximum Random Access Time 150ns
Number of Words 32768

Key Features

  • The device supports a 5 V ±10% supply voltage with parallel interface connectivity.
  • Maximum clock frequency is 5 MHz enabling fast operation.
  • Memory organisation is 32K x 8 bits, with 8 bits per word.
  • Low power consumption with read/write current max 40 mA and CMOS standby current less than 200 µA.
  • Operating temperature range from -40°C to 85°C for industrial applications.
  • Data retention guaranteed for 10 years ensuring reliability.
  • Compact 28-pin SOIC surface mount package dimensions of 18.1 mm length by 7.6 mm width.
  • Self-timed erase and write cycles with 10 ms max write time.

Product Description

Microchip AT28C256-15SU is a high-performance 256 kbit Parallel EEPROM designed for industrial and military temperature range applications. This EEPROM supports fast 150 ns access time with low power dissipation of 440 mW, making it suitable for demanding embedded system designs.

The device utilizes a parallel interface with 28-pin SOIC package appropriate for surface mount technology. Operating from a 5 V ±10% supply, it can sustain clock frequencies up to 5 MHz enabling rapid data transfers.

Memory is organized as 32K x 8 bits with 8 bits per word, providing 256 kB total memory size. It supports self-timed erase and write cycles with maximum 10 ms write timings and features page write and byte write capability for flexible programming.

Microchip AT28C256-15SU has extremely low consumption: read/write current is max 40 mA with standby CMOS current under 200 μA, allowing energy-efficient operation in battery-powered or low power systems.

The device withstands operating temperatures from -40° to 85°C, ensuring reliability in harsh industrial environments. It guarantees data retention for 10 years making it ideal for long-term memory storage.

Fast 150 ns random access time improves system performance. Reliable self-timed erase and write cycles simplify design. Compact 28-pin SOIC package fits standard PCB footprints. Low power consumption lowers operational costs.

Wide temperature range supports industrial and military uses. Long data retention ensures persistent memory storage.

This parallel EEPROM is widely used in industrial automation, data logging, communication equipment, and embedded control systems that require dependable non-volatile memory storage. With its robust specifications and efficient power use, it provides excellent value for embedded memory needs.

Explore the broad selection of semiconductor memory components in the EEPROM category on EnvMart for compatible parts and accessories.

Microchip 256 kB Parallel EEPROM 150 ns 28-Pin SOIC AT28C256-15SU
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Frequently Asked Questions

The maximum clock frequency of this model is 5 MHz, enabling rapid data transfers.

The memory is organized as 32K x 8 bits, providing a total memory size of 256 kB.

This unit operates within a temperature range of -40°C to 85°C, suitable for industrial applications.

The package dimensions are 18.1 mm in length and 7.6 mm in width.

The maximum random access time is 150 ns, allowing for fast data retrieval.

It supports a supply voltage range of 4.5V to 5.5V, with a nominal supply of 5V ±10%.

The maximum read/write current is 40 mA, with a standby CMOS current of less than 200 μA.

It supports both page write and byte write capabilities for flexible programming options.

Data retention is guaranteed for 10 years, ensuring reliability for long-term storage.

The device has a low power dissipation of 440 mW, making it suitable for energy-efficient applications.

It utilizes a parallel interface, which is standard for this type of memory component.

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