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Microchip MOSFET Gate Driver 2 Output 4.5 A 8-Pin PDIP 18-20V TC4425AVPA
Specifications
| Country of Origin | Thailand |
|---|---|
| Brand | Microchip |
| Height | 4.95mm |
| Length | 10.16mm |
| Model | TC4425AVPA |
| Width | 7.11mm |
| Mount Type | Through Hole |
| Series | TC4425A |
| Output Current | 4.5A |
| Maximum Operating Temperature | 125°C |
| Package Type | PDIP |
| Minimum Operating Temperature | -40°C |
| Number of outputs | 2 |
| Rise Time | 12ns |
| Pin Count | 8 |
| Maximum Supply Voltage | 20V |
| Minimum Supply Voltage | 18V |
| Number of Drivers | 2 |
| Fall Time | 12ns |
| Driver Type | MOSFET |
Key Features
- This device provides two MOSFET driver outputs with a peak output current of 4.5 Amps.
- It operates within a supply voltage range from 18V minimum to 20V maximum.
- The PDIP package has 8 pins and supports through-hole mounting.
- Features fast rise and fall times of 12 nanoseconds each for efficient switching.
- Operates reliably from -40°C to 125°C ambient temperature.
- Designed for driving power MOSFETs and IGBTs in power management applications.
- Manufactured in Thailand with new product condition assurance.
- Ideal for industrial, electronic component, and power management semiconductor applications.
Product Description
Microchip TC4425AVPA is a dual MOSFET gate driver integrated circuit designed to deliver high peak output currents of up to 4.5 Amps across two outputs. Packaged in an 8-pin PDIP format, it provides fast switching times with a rise time and fall time of 12 nanoseconds each, making it suitable for high-efficiency power control circuits.
The device supports a supply voltage range from 18V minimum to 20V maximum, and can operate reliably in a wide temperature range from -40 degrees Celsius to 125 degrees Celsius, ensuring robust performance in industrial environments. Its compact dimensions of 10.16 mm length, 7.11 mm width, and 4.95 mm height facilitate easy integration on PCBs requiring through-hole components.
This gate driver is specifically devised for driving power MOSFET transistors and Insulated Gate Bipolar Transistors (IGBTs), commonly used in various power management IC applications such as motor control, power supplies, and industrial automation.
Its design supports improved production efficiency through ready-to-insert packaging, ideal for engineers and designers working in electronic component assembly and semiconductor power management circuits.
This MOSFET Gate Driver includes two driver outputs for controlling separate MOSFETs. It features voltage supply compatibility from 18 volts to a maximum of 20 volts. Fast rise and fall time switching enhances the efficiency of power electronic systems.
The 8-pin PDIP package supports simple through-hole PCB mounting and integration. Operating temperature range from -40°C to 125°C suits harsh industrial conditions. Manufactured in Thailand, ensuring build quality and reliability.
Compact size makes it suitable for space-constrained applications.
This product is a critical component for use in electronics, industrial power management, and automation fields. It complements the needs of engineers designing circuits requiring precise and efficient MOSFET control.
Explore the range of power management ICs and gate drivers at EnvMart for related components and upgrade options.
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Frequently Asked Questions
This model provides a peak output current of 4.5 Amps across its two outputs.
It operates within a supply voltage range from 18V minimum to 20V maximum.
The dimensions of this unit are 10.16 mm in length, 7.11 mm in width, and 4.95 mm in height.
It operates reliably in a temperature range from -40°C to 125°C.
This device supports through-hole mounting due to its 8-pin PDIP package.
The rise time and fall time for this model are both 12 nanoseconds.
This unit features two outputs for driving separate MOSFETs.
It is designed to drive power MOSFETs and Insulated Gate Bipolar Transistors (IGBTs).
This product is manufactured in Thailand.
This model belongs to the TC4425A series of MOSFET gate drivers.
It is suitable for applications in power management, including motor control and industrial automation.
It features fast rise and fall times of 12 nanoseconds each, improving efficiency in power electronic systems.
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