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Infineon Bridge Rectifier SiC Diode 1200 V 415 A Forward Current 60 A AG-EASY1B-1 DDB2U60N12W1RFB11BPSA1

Category Bridge Rectifier Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Length 62.8mm
Model DDB2U60N12W1RFB11BPSA1
Width 33.8mm
Mount Type Chassis
Series DDB2U60
Configuration SiC Diod
Maximum Operating Temperature 150°C
Package Type AG-EASY1B-1
Minimum Operating Temperature -40°C
Number of Phases 1
Standards/Approvals RoHS, 60749 and 60068, IEC24720 and IEC16022, IEC 60747, IEC8859-1
Peak Reverse Repetitive Voltage Vrrm 1200V
Peak Non-Repetitive Forward Surge Current Ifsm 415A
Forward Current If 60A
Peak Forward Voltage Vf 1.85V

Key Features

  • Features a peak reverse repetitive voltage (Vrrm) of 1200 volts.
  • Supports a forward current (If) of 60 amperes for sustained operation.
  • Equipped with a peak non-repetitive forward surge current (Ifsm) rating of 415 amperes.
  • Operates efficiently within a temperature range from -40°C to a maximum of 150°C.
  • Package type AG-EASY1B-1 designed for chassis mounting to ensure robust installation.
  • Utilizes SiC (Silicon Carbide) diode configuration for improved efficiency and thermal performance.
  • Meets multiple standards including RoHS, IEC24720, IEC16022, IEC 60747, and IEC8859-1 for quality assurance.
  • Ideal for use in industrial power applications requiring high voltage and current handling capabilities.

Product Description

Infineon DDB2U60N12W1RFB11BPSA1 is a high-performance bridge rectifier incorporating a Silicon Carbide (SiC) Schottky diode configured for single-phase power rectification. Designed for robust industrial and electronic applications, this component supports a peak reverse repetitive voltage of 1200 V and continuous forward current of 60 A, making it suitable for demanding power control circuits.

The device features a chassis mount type design packaged in AG-EASY1B-1, providing rugged installation with integrated mounting clamps. It operates reliably across a wide temperature range from -40°C to 150°C, enhancing durability in harsh environments.

Key to its performance is the CoolSiC Schottky diode technology that provides low forward voltage drop of 1.85 V and high surge current capacity of 415 A, enabling efficient power conversion with minimal losses and improved thermal resistance due to its Al2O3 substrate.

Meeting international standards including RoHS compliance and IEC norms such as IEC24720 and IEC16022 assures quality and regulatory conformance. The component is designed for automotive-grade and industrial power supply systems requiring efficient and rugged semiconductor solutions.

This Bridge Rectifier module also includes an integrated NTC temperature sensor, facilitating thermal monitoring and protection in critical applications. Its compact size of 62.8 mm length and 33.8 mm width helps optimize PCB layouts and system integration.

Features a peak reverse repetitive voltage (Vrrm) of 1200 volts. Supports a forward current (If) of 60 amperes for sustained operation. Equipped with a peak non-repetitive forward surge current (Ifsm) rating of 415 amperes.

Operates efficiently within a temperature range from -40°C to a maximum of 150°C. Package type AG-EASY1B-1 designed for chassis mounting to ensure robust installation. Utilizes SiC (Silicon Carbide) diode configuration for improved efficiency and thermal performance.

Device meets multiple international standards including RoHS and IEC approvals. Compact dimensions suitable for tight electronic assemblies. Integrated NTC temperature sensor enhances operational safety.

Ideal for industrial, power electronics, and semiconductor applications requiring high voltage and current rectification with reliable temperature management. Explore further semiconductor and power connector products in the Electronics & Electricals category at EnvMart.

Infineon Bridge Rectifier SiC Diode 1200 V 415 A Forward Current 60 A AG-EASY1B-1 DDB2U60N12W1RFB11BPSA1
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