STMicroelectronics MDmesh DM2 N-Channel MOSFET, 22 A Continuous Drain Current, 650 V Drain Source Voltage STW28N60DM2

STMicroelectronics MDmesh DM2 N-Channel MOSFET model STW28N60DM2 is engineered for industrial and commercial power regulation applications requiring high voltage and current capacity. This transistor supports a maximum continuous drain current of 22 amps and a drain-source voltage of 650 volts, rated for a power dissipation capacity of 190 watts. It is housed in a TO-247 package with 3 pins and a through-hole mount type, facilitating practical PCB assembly in power equipment and converter designs.

The device benefits from STMicroelectronics' MDmesh DM2 technology that delivers low RDS(on) typical resistance of 160 milliohms, reducing conduction losses and improving efficiency. The MOSFET operates effectively in enhancement channel mode, enabling effective switching in full-bridge ZVS topologies and similar circuits. It has a gate charge of 39 nanocoulombs typical at gate-source voltage, allowing swift switching timings beneficial in switching power supplies and motor control.

The component is built to operate in environments from -55 degrees Celsius up to a maximum of 150 degrees Celsius, meeting industrial standards though it is not AEC-Q101 automotive qualified. The maximum gate-source voltage tolerance is ±25 volts, enhancing gate protection under electrical stress. With dimensions of 20.15 mm height, 15.75 mm length, and 5.15 mm width, this MOSFET suits compact designs.

This product is ideal for designers and engineers in power electronics, industrial control, motor drives, and renewable energy inverters who require reliable, high-performance N-channel MOSFETs. The robust power ratings and optimized diode reverse recovery time make it suitable for enhancing system reliability and efficiency.

Choose STMicroelectronics STW28N60DM2 for applications demanding high power switching, efficient thermal management, and durable semiconductor performance in severe electrical and thermal environments.

Maximum continuous drain current of 22 A supports heavy-duty applications. 650 V drain-source voltage rating allows use in high-voltage circuits. Low RDS(on) of 160 mΩ reduces power loss during conduction. 190 W power dissipation for sustained operation at high power levels.

TO-247 package ensures standard mounting and ease of use. Wide operating temperature range of -55°C to 150°C for reliability. Enhancement mode channel type for effective switching. Gate charge of 39 nC ensures fast switching times.

Maximum gate-source voltage ±25 V for gate reliability. Compact dimensions aid space-constrained applications. Browse our Electronics Components category for more discrete semiconductor devices by STMicroelectronics and other trusted brands at EnvMart.