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ROHM Infrared Emitting Diode SIR-56ST3F, 950 nm, 8 mW/sr, DIP, Through Hole
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | ROHM |
| Model | SIR-56ST3F |
| Packaging | Bulk |
| Mount Type | Through Hole |
| Number Of Leds | 1 |
| Package Type | DIP |
| Number of Pins | 2 |
| Lens Shape | Round |
| Maximum Supply Voltage | 1.6V |
| Peak Wavelength | 950nm |
| LED Material | GaAs |
| Angle of half intensity | 15° |
| Radiant Intensity | 8mW/sr |
Key Features
- Features a precise peak wavelength of 950 nm for consistent infrared emission.
- Radiant intensity of 8 mW/sr ensures strong output signal for sensitive applications.
- Standard DIP through-hole package enables convenient integration into PCBs.
- Round GaAs lens ensures optimal transmission and durability.
- Typical 1.6V supply voltage allows versatile usage with low-voltage circuits.
- Angle of half intensity is 15°, facilitating focused IR output.
- Single LED configuration with 2 connector pins simplifies mounting and circuit design.
Product Description
The ROHM SIR-56ST3F is a high-quality infrared (IR) emitting diode designed for electronic devices requiring precise and efficient IR signal transmission. With a peak wavelength of 950 nm, this diode is especially suited to applications such as remote controllers, optical sensors, and IR communication systems.
Utilizing a round gallium arsenide (GaAs) lens and encapsulated in a DIP through-hole package, the SIR-56ST3F supports straightforward integration into circuit boards and offers robust performance in demanding environments. The bulk packaging option makes it ideal for assembly lines or high-volume manufacturing.
A radiant intensity of 8 mW/sr ensures reliable output for IR-sensitive receivers, while the 15° angle of half intensity allows for focused emission. The device operates at a maximum supply voltage of 1.6V, making it compatible with modern low-voltage electronic designs.
It is equipped with two pins for stable electrical connectivity and includes a single LED per device. The mount type is specifically through-hole, providing secure installation and ease of maintenance. The SIR-56ST3F is best suited for IR sensor arrays, consumer electronics, industrial signaling equipment, and devices requiring clear IR emission.
Typical use cases span remote control systems, position and motion detectors, optical communication links, and automation setups in industrial and laboratory environments. The product complies with technical standards for optoelectronic components and is manufactured in Japan, ensuring high build quality and reliability. No automotive-specific compliance is claimed; this device is best used in standard electronic assemblies.
For more advanced optoelectronics, industrial automation, and remote sensing components, browse the full range of ROHM Infrared LEDs and LEDs - Light Emitting Diodes on the EnvMart platform.
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Frequently Asked Questions
The peak wavelength of the ROHM SIR-56ST3F is 950 nm, which ensures consistent infrared emission.
This model has a radiant intensity of 8 mW/sr, providing a strong output signal for sensitive applications.
The maximum supply voltage for this infrared emitting diode is 1.6V, making it suitable for low-voltage circuits.
It is packaged in a DIP (Dual In-line Package) format, allowing for convenient integration into PCBs.
The angle of half intensity for this model is 15°, which facilitates focused IR output.
This infrared LED features 2 connector pins, simplifying mounting and circuit design.
The SIR-56ST3F utilizes a round lens shape, which enhances optimal transmission and durability.
This product is manufactured in Japan, ensuring high build quality and reliability.
It is suitable for applications such as remote controllers, optical sensors, and IR communication systems.
This model includes a single LED per device, which is typical for its design.
It supports through-hole mounting, providing secure installation and ease of maintenance.
The LED material used in the SIR-56ST3F is gallium arsenide (GaAs), which is common for infrared diodes.
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