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Infineon 2 MB SPI FRAM 8-Pin DFN High-Endurance Ferroelectric RAM Memory for SPI Interface FM25V20A-DGQ

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Infineon 2 MB SPI FRAM 8-Pin DFN High-Endurance Ferroelectric RAM Memory for SPI Interface FM25V20A-DGQ

Name: Infineon 2 MB SPI FRAM 8-Pin DFN High-Endurance Ferroelectric RAM Memory for SPI Interface FM25V20A-DGQ
Brand: Infineon
SKU: 416415
Price: 24.34 USD
Availability: InStock

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Category FRAM Memory Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	700μm
Length	5mm
Model	FM25V20A-DGQ
Width	6mm
Mount Type	Surface
Maximum Operating Temperature	105°C
Package Type	DFN
Minimum Operating Temperature	-40°C
Memory size	2MB
Interface Type	SPI
Pin Count	8
Automotive Standard	AEC-Q100
Maximum Supply Voltage	3.6V
Minimum Supply Voltage	2V
Maximum Clock Frequency	40MHz
Organisation	256kB x 8 Bit
Number of Bits per Word	8
Maximum Random Access Time	11ns
Number of Words	256K
Extended temperature	- 40 °C to +105 °C

Key Features

2 Mbit (256 K x 8) ferroelectric RAM designed for high endurance with 10 trillion read/write cycles.
Supports SPI interface with maximum clock frequency up to 40 MHz.
Low power consumption with 3 mA active, 400 µA standby, and 12 µA sleep currents.
Operates in extended temperature range from -40°C to +105°C, conforming to automotive AEC-Q100 standard.
8-pin thin DFN package with small dimensions of 5 mm length, 6 mm width, and 700 µm height.
Fast maximum random access time of 11 ns enables rapid data retrieval.
Supports SPI modes 0 and 3, allowing compatibility with various host controllers.
Includes sophisticated hardware and software write protection features.

Product Description

Infineon FM25V20A-DGQ is a 2 MB ferroelectric random access memory (FRAM) featuring a 256 K x 8-bit organisation and an 8-pin thin dual flat no leads (DFN) package. It is designed for applications requiring high endurance with 10 trillion read/write cycles and offers a rapid 11 ns maximum random access time, accommodating high-speed data operations with maximum clock frequency of 40 MHz via SPI interface.

This FRAM device operates on a low voltage range from 2.0 V to 3.6 V and supports sophisticated write protection schemes through both hardware Write Protect pin and software instructions. It is compliant with automotive standard AEC-Q100 and can operate reliably within a wide temperature range from -40°C up to +105°C, ensuring stable performance in harsh environments.

The compact 8-pin DFN package measures 5 mm in length, 6 mm in width, and 700 µm in height, allowing for space savings in embedded circuit designs. It is a direct hardware replacement for traditional serial flash and EEPROM memory, offering better endurance and data retention of up to 121 years.

High endurance FRAM with 10 trillion read/write cycles. Low power consumptions: 3 mA active current at 33 MHz. Supports SPI modes 0 and 3 for versatile interfacing. Extended temperature rating suitable for automotive applications.

Compact DFN 8-pin package with small footprint. Fast random access time of 11 ns enhances performance. Hardware and software write protection for data security. Wide voltage operating range from 2.0 V to 3.6 V. Long data retention period of 121 years.

This high-performance memory component is ideal for industrial, automotive, and embedded systems requiring reliable, fast, and durable non-volatile memory solutions. Explore the Infineon FRAM Memory category at EnvMart for related semiconductor components.