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Infineon OptiMOS 5 N-Channel MOSFET & Diode, 205 A, 40 V Enhancement, 8-Pin TDSON BSC014N04LSTATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.2mm |
| Length | 5.35mm |
| Model | BSC014N04LSTATMA1 |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | OptiMOS 5 |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 205A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 115W |
| Typical Gate Charge Qg @ Vgs | 61nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- The device supports a maximum continuous drain current of 205 amps.
- It features a maximum drain-source voltage of 40 volts.
- The MOSFET has a low Rds(on) resistance of 1.4 milliohms.
- Designed for surface mount with 8 pins in a TDSON package.
- Enhanced channel mode is of the enhancement type.
- Maximum power dissipation rating is 115 watts.
- Operates reliably in temperatures ranging from -55°C to 175°C.
- Typical gate charge at Vgs is 61 nanocoulombs.
Product Description
Infineon BSC014N04LSTATMA1 OptiMOS 5 N-Channel MOSFET & Diode delivers cutting-edge performance with a continuous drain current rating of 205 A and a drain-source voltage of 40 V.
This device in a compact 8-pin TDSON package incorporates the latest SuperSO8 packaging technology that enhances thermal performance, allowing operation up to 175°C junction temperature.
The MOSFET's low Rds(on) resistance of 1.4 milliohms ensures efficient conduction and minimizes power losses, making it ideal for high-efficiency applications. With a maximum power dissipation of 115 W, this component supports demanding power management tasks in telecom, motor drives, server systems, and general power electronics.
The 20 V gate-source voltage rating and 61 nC typical gate charge provide excellent switching performance, optimizing synchronous rectification and enhancing system reliability. The robust construction supports an operating temperature range from -55°C to 175°C, ensuring longevity and stable performance under harsh conditions.
The device supports a maximum continuous drain current of 205 amps. It features a maximum drain-source voltage of 40 volts. The MOSFET has a low Rds(on) resistance of 1.4 milliohms. Designed for surface mount with 8 pins in a TDSON package.
Enhanced channel mode is of the enhancement type. Maximum power dissipation rating is 115 watts. Operates reliably in temperatures ranging from -55°C to 175°C. Typical gate charge at Vgs is 61 nanocoulombs. Maximum gate-source voltage rating is 20 volts.
Forward diode voltage is 1 volt, suitable for synchronous rectification. Compact physical dimensions include length 5.35 mm, width 6.1 mm, and height 1.2 mm. This Infineon OptiMOS 5 product is suited for industrial, telecom, automotive, and server power applications requiring high power density, efficiency, and thermal robustness.
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Frequently Asked Questions
The maximum continuous drain current for this model is 205 amps.
This device features a maximum drain-source voltage of 40 volts.
The MOSFET has a low Rds(on) resistance of 1.4 milliohms.
The maximum power dissipation rating is 115 watts.
It operates reliably in temperatures ranging from -55°C to 175°C.
The dimensions are 5.35 mm in length, 6.1 mm in width, and 1.2 mm in height.
This model is designed in an 8-pin TDSON package.
The typical gate charge at Vgs is 61 nanocoulombs.
The maximum gate-source voltage rating is 20 volts.
This device is suited for industrial, telecom, automotive, and server power applications.
It has an N-channel type with enhancement mode.
The forward voltage is 1 volt, suitable for synchronous rectification.
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