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Infineon CoolMOS N-Channel MOSFET & Diode 97 A 650 V Enhancement 5-Pin VSON IPL60R095CFD7AUMA1

Category Discrete Semiconductors Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.1mm
Length 8.1mm
Model IPL60R095CFD7AUMA1
Width 8.1mm
Mount Type Surface
Series CoolMOS
Maximum Operating Temperature 150°C
Package Type VSON
Minimum Operating Temperature -40°C
Pin Count 5
Channel Type N
Maximum Continuous Drain Current Id 97A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 65mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 147W
Typical Gate Charge Qg @ Vgs 51nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Employs CoolMOS CFD7 technology for high voltage super junction MOSFET performance.
  • Integrated fast body diode with ultra-fast switching characteristics.
  • Low gate charge of 51 nC enables efficient operation and reduced switching losses.
  • Maximum drain-source resistance of 65 mΩ for efficient conduction.
  • Capable of dissipating up to 147 W with a maximum operating temperature of 150°C.
  • Dimensioned at 8.1 mm length, 8.1 mm width, and 1.1 mm height for compact PCB mounting.
  • Designed for surface mount applications ensuring reliable mechanical and electrical connections.
  • Wide operating temperature range from -40°C to 150°C for industrial reliability.

Product Description

Infineon IPL60R095CFD7AUMA1 is a high-performance CoolMOS N-Channel MOSFET & Diode designed for industrial and electronic component applications requiring high efficiency and reliability. Rated for a maximum continuous drain current of 97 A and a drain-source voltage of 650 V, this device incorporates Infineon's latest super junction MOSFET CFD7 technology with an integrated ultra-fast body diode.

This device features reduced gate charge (Qg) of 51 nC at Vgs that improves switching speed while minimizing power losses, making it ideal for power management circuits, power supplies, and motor drivers in industrial, automotive, and consumer electronics.

The IPL60R095CFD7AUMA1 package is a 5-pin VSON surface mount type, measuring 8.1 mm by 8.1 mm in footprint and 1.1 mm in height, facilitating compact PCB layouts. It supports a wide operating temperature range from -40°C to 150°C, ensuring durability in harsh environments.

Key advantages include best-in-class reverse recovery charge (Qrr) reduction, low forward voltage (1 V), and a maximum power dissipation of 147 W, enabling increased power density solutions with excellent thermal performance and reliability for resonant topologies and hard commutation ruggedness.

Utilizes CoolMOS CFD7 super junction technology for superior efficiency. Features integrated ultra-fast body diode with reduced reverse recovery time. Designed for high power density and improved thermal management. Low typical gate charge optimizes switching performance and efficiency.

Reliable surface mount VSON package supporting robust mechanical strength. Wide industrial temperature range suitable for demanding applications. Best suited for power supplies, inverter circuits, and industrial motor control.

This product represents an optimal choice for engineers seeking efficient, compact, and durable MOSFET solutions in power electronics. Explore the broad range of Infineon discrete semiconductor devices from EnvMart for your industrial and commercial electronic design needs.

Explore more products in our Discrete Semiconductors category.

Infineon CoolMOS N-Channel MOSFET & Diode 97 A 650 V Enhancement 5-Pin VSON IPL60R095CFD7AUMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 97 A.

This unit has a maximum drain-source voltage rating of 650 V.

The typical gate charge at Vgs for the IPL60R095CFD7AUMA1 is 51 nC.

The dimensions of the VSON package are 8.1 mm in length, 8.1 mm in width, and 1.1 mm in height.

The maximum power dissipation for this model is 147 W.

It operates within a temperature range of -40°C to 150°C.

This model supports surface mounting, ensuring reliable mechanical and electrical connections.

The maximum drain-source resistance for this device is 65 mΩ.

It is suitable for power management circuits, power supplies, and motor drivers in industrial, automotive, and consumer electronics.

The forward voltage of the integrated body diode is 1 V.

This model has a pin count of 5.

It employs CoolMOS CFD7 technology for enhanced performance and efficiency.

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