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Infineon CoolMOS P7 N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin TO-247 IPZA60R180P7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 41.2mm |
| Length | 15.9mm |
| Model | IPZA60R180P7XKSA1 |
| Width | 5.1mm |
| Mount Type | Through Hole |
| Series | CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 180mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 72W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- Features CoolMOS P7 technology for high efficiency and low gate charge.
- Maximum continuous drain current of 18 amperes ensuring high power capability.
- Maximum drain-source voltage rating of 600 volts suitable for industrial applications.
- Low Rds(on) of 180 milliohms enables reduced conduction losses.
- Enhancement mode channel with a maximum gate-source voltage of 20 volts for reliable switching.
- Robust package with 4 pins in TO-247 form factor facilitating through hole mounting.
- Maximum power dissipation of 72 watts and capable of operation from -55°C to 150°C.
- Typical gate charge of 25 nanocoulombs providing fast switching speeds.
Product Description
Infineon IPZA60R180P7XKSA1 is a CoolMOS P7 series N-Channel MOSFET designed for high efficiency and rugged power conversion applications. It comes in a 4-pin TO-247 through-hole package and supports a maximum continuous drain current of 18 A with a maximum drain-source voltage of 600 V. This enhancement mode MOSFET features a low gate charge of 25 nC and a low on-resistance of 180 mΩ, reducing conduction and switching losses to provide optimized efficiency.
The device operates across a wide temperature range from -55°C up to 150°C, making it suitable for demanding industrial and automotive environments. Its robust body diode and integrated gate resistor improve switching behavior and protect against voltage spikes. The typical forward voltage drop is 900 mV, making the device efficient for power applications requiring high switching frequencies.
Applications include industrial motor drives, power supplies, renewable energy systems, and automotive electronics where high reliability and efficiency are critical. The TO-247 package allows easier mounting and heat dissipation for higher power handling.
Utilizes Infineon's 7th generation CoolMOS technology for efficient power management. Supports rugged ESD protection of ≥ 2kV (HBM class 2), ensuring durability. Low gate charge enables fast switching and reduced losses during operation.
Wide portfolio supporting both surface mount and through-hole mounting options. Compatible with industrial and standard grade requirements for flexibility.
Choose Infineon CoolMOS P7 N-Channel MOSFET IPZA60R180P7XKSA1 for high performance power switching and conversion solutions. Explore more components in the Semiconductor and MOSFET category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 18 A.
This MOSFET has a maximum drain-source voltage rating of 600 V.
The typical gate charge for this unit is 25 nC.
The on-resistance (Rds(on)) of this model is 180 mΩ, which helps reduce conduction losses.
It operates within a temperature range of -55°C to 150°C.
This model comes in a TO-247 package type, suitable for through-hole mounting.
The maximum power dissipation for this MOSFET is 72 W.
The maximum gate-source voltage for this model is 20 V.
This unit is suitable for applications including industrial motor drives, power supplies, renewable energy systems, and automotive electronics.
This MOSFET features a 4-pin configuration.
The typical forward voltage drop for this model is 900 mV.
The country of origin for this MOSFET is India.
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