ROHM 950 nm Infrared Emitting Diode 3 mm (T-1) Through Hole Package SIR-34ST3F

The ROHM SIR-34ST3F infrared emitting diode is designed for efficient infrared light emission in electronic devices and systems. This component operates at a peak wavelength of 950 nm, ideal for a wide range of infrared applications including sensing and signaling.

Packaged in a durable 3 mm (T-1) through hole format with a round lens shape, it ensures focused and reliable performance on printed circuit boards. The radiant intensity of 17.6 mW/sr enables strong infrared output, making it suitable for industrial, communication, and consumer electronics.

Its through hole mount type ensures secure mechanical and electrical connections, making it compatible with manual and automated insertion methods. The diode features a moderate angle of half intensity at 27 degrees to provide directional illumination.

Constructed with Gallium Arsenide (GaAs), the diode ensures longevity and stable operation under normal environmental conditions. The maximum supply voltage is limited to 1.6 volts to protect the device and optimize efficiency.

1 LED with 2 pins is provided in bulk packaging, suitable for high volume manufacturing and assembly processes. This product finds applications in electronic circuits requiring infrared light sources in manufacturing, industrial automation, and electronic component assembly.

Choose ROHM SIR-34ST3F for reliable and efficient infrared emitting diode performance in your electronic design and production needs. Operates at peak wavelength of 950 nm. 3 mm (T-1) round lens package. Radiant intensity: 17.6 mW/sr.

Through hole mount type with 2 pins. Angle of half intensity: 27 degrees. GaAs LED material construction. Maximum supply voltage: 1.6 V. Bulk packaging for manufacturing use. Single LED component for versatile applications.

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