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Microchip Split Gate 16 MB Quad-SPI Flash Memory 8-Pin SOIC SST26VF016B-104I/SN

Category Flash Memory Brand Microchip Condition New

Specifications

Country of Origin India
Brand Microchip
Height 1.5mm
Length 4.9mm
Cell Type Split Gate
Model SST26VF016B-104I/SN
Width 3.9mm
Mount Type Surface
Series SST26
Maximum Operating Temperature 85°C
Package Type SOIC
Minimum Operating Temperature -40°C
Memory size 16MB
Interface Type Quad-SPI
Standards/Approvals RoHS
Pin Count 8
Automotive Standard AEC-Q100
Maximum Supply Voltage 3.6V
Minimum Supply Voltage 2.7V
Supply Current 15mA
Maximum Clock Frequency 104MHz
Organisation 2M x 8 Bit
Number of Bits per Word 8
Maximum Random Access Time 8ns

Key Features

  • Features a Split Gate cell type ensuring durability and reliability.
  • Operates with a maximum clock frequency of 104 MHz for fast data access.
  • Supports x1/x2/x4 Serial Peripheral Interface (SPI) protocol for versatile communication.
  • Low active current consumption of 15 mA at 104 MHz enhances energy efficiency.
  • Wide operating voltage range from 2.7V to 3.6V suitable for various applications.
  • Complies with RoHS standards for environmental safety.
  • Surface mount with a compact SOIC 8-pin package for easy PCB integration.
  • Wide temperature range from -40°C to 85°C suitable for industrial environments.

Product Description

Microchip SST26VF016B-104I/SN is a 16 MB Serial Quad I/O (SQI) SuperFlash® memory IC featuring a unique Split Gate cell technology that provides exceptional durability and performance. Packaged in an 8-pin SOIC surface mount, it offers a compact footprint ideal for embedded system design.

This device supports a high-speed Quad-SPI interface with maximum clock frequency of 104 MHz, enabling low-latency execute-in-place (XIP) with minimal processor buffering. The memory supports x1, x2, and x4 SPI protocols ensuring compatibility with standard Serial Peripheral Interface.

The SST26VF016B/032B/064B family utilizes SuperFlash® technology delivering fast erase and programming times compared to traditional Flash memories. Sector and block erase operations are completed typically in 18 ms, with full chip erase in about 35 ms, allowing efficient in-system reprogramming.

Designed for reliability, this flash memory operates over a wide supply voltage range from 2.7V to 3.6V and in an ambient temperature range of -40°C to 85°C, making it suitable for automotive and industrial applications certified to AEC-Q100 standards.

The device consumes low active current of around 15 mA during read operations and ultra-low standby current of 15 μA, supporting energy efficient designs. Split Gate cell type enhances data retention and endurance. High speed Quad-SPI interface with 104 MHz clock maximum.

Low power consumption during active and standby modes. Fast erase times utilizing SuperFlash technology. Compact 8-pin SOIC surface mount package. Wide operating temperature for industrial and automotive environments.

This Flash Memory is ideal for industrial, automotive, embedded computing, and consumer electronics applications requiring reliable non-volatile storage with high-speed serial communication.

Explore more semiconductor solutions and memory products at EnvMart to enhance your electronic designs efficiently.

Microchip Split Gate 16 MB Quad-SPI Flash Memory 8-Pin SOIC SST26VF016B-104I/SN
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Frequently Asked Questions

This model has a memory size of 16 MB.

It operates with a maximum clock frequency of 104 MHz.

It supports x1, x2, and x4 Serial Peripheral Interface (SPI) protocols.

The operating voltage range is from 2.7V to 3.6V.

The dimensions are 4.9 mm in length, 3.9 mm in width, and 1.5 mm in height.

It operates within a temperature range of -40°C to 85°C.

The active current consumption is approximately 15 mA at 104 MHz.

Yes, it complies with RoHS standards for environmental safety.

It comes in a compact 8-pin SOIC surface mount package.

It meets the AEC-Q100 automotive standard.

The maximum random access time is 8 ns.

It utilizes SuperFlash® technology for fast erase and programming times.

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