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Microchip Split Gate 4 MB Parallel Flash Memory 32-Pin PLCC SST39SF040-55-4I-NHE
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Height | 2.79mm |
| Length | 13.97mm |
| Cell Type | Split Gate |
| Model | SST39SF040-55-4I-NHE |
| Width | 349.25mm |
| Mount Type | Surface |
| Series | SST39SF040 |
| Maximum Operating Temperature | 85°C |
| Package Type | PLCC |
| Minimum Operating Temperature | -40°C |
| Memory size | 4MB |
| Interface Type | Parallel |
| Pin Count | 32 |
| Maximum Supply Voltage | 5.5V |
| Minimum Supply Voltage | 4.5V |
| Supply Current | 25mA |
| Organisation | 512 k x 8 Bit |
| Number of Bits per Word | 8 |
| Maximum Random Access Time | 55ns |
| Number of Words | 512K |
| Timing Type | Asynchronous |
| Chip-Erase Time | 70 ms (typical) |
Key Features
- 4 MB memory size organized as 512K x 8 bit for efficient data storage.
- Split Gate cell technology with asynchronous timing for versatile operation.
- Operates between supply voltages of 4.5 V to 5.5 V ensuring compatibility.
- Temperature range from -40°C to 85°C suitable for industrial environments.
- Low power consumption with 25 mA supply current for energy efficiency.
- Compact 32-pin PLCC package with dimensions 13.97 mm length, 2.79 mm height, and 349.25 mm width.
- Fast maximum random access time of 55 ns for quick data retrieval.
- Supports sector erase with uniform 4 Kbyte sectors and chip erase in 70 ms typical.
Product Description
Microchip SST39SF040-55-4I-NHE is a 4 MB Parallel Flash Memory IC featuring Split Gate cell technology and housed in a 32-pin PLCC package. Designed for embedded systems requiring reliable and efficient non-volatile memory storage, it operates asynchronously with supply voltages ranging from 4.5 V to 5.5 V.
The device supports 512K words with 8 bits per word organisation and offers low power consumption with an active current of approximately 25 mA. Operating temperature spans from -40°C to 85°C, making it suitable for diverse industrial and commercial applications.
This memory IC incorporates sector-erase capability with uniform 4 Kbyte sectors and provides fast chip erase times around 70 ms. It uses JEDEC standard interfaces and supports TTL-compatible I/O, enabling easy integration within complex electronic circuits.
Key features include a maximum random access time of 55 ns, endurance up to 100,000 program/erase cycles, and efficient internal timing with automatic VPP generation. The package dimensions are precisely 13.97 mm length, 2.79 mm height, and 349.25 mm width, compact for space-constrained installations.
4 MB memory capacity suitable for complex data storage requirements. Split Gate cell type technology for robustness and durability. Asynchronous timing supports flexible system designs. Wide voltage and temperature operating range ideal for industrial use.
Low power active and standby current reduce energy consumption. Supports fast sector and chip erase functions for quick updates. JEDEC standard compliance guarantees broad compatibility. TTL I/O compatible for seamless connectivity.
Compact 32-pin PLCC package fits various circuit boards. Endurance of 100,000 cycles offers long life span.
This Microchip flash memory is well suited for industrial, embedded, communication systems, data logging, and control applications. Its reliable performance ensures improved productivity and system stability in diverse environments.
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Frequently Asked Questions
This model has a memory size of 4 MB, organized as 512K x 8 bits for efficient data storage.
The maximum random access time for this unit is 55 ns, allowing for quick data retrieval.
It operates between supply voltages of 4.5 V and 5.5 V, ensuring compatibility with various systems.
The operating temperature range is from -40°C to 85°C, making it suitable for industrial environments.
The supply current for this model is approximately 25 mA, contributing to its low power consumption.
The package dimensions are 13.97 mm in length, 2.79 mm in height, and 349.25 mm in width.
Yes, it supports sector erase with uniform 4 Kbyte sectors and chip erase in approximately 70 ms.
This model uses a parallel interface type, compatible with TTL I/O for easy integration.
The endurance of this flash memory is up to 100,000 program/erase cycles, ensuring a long lifespan.
This flash memory uses a surface mount type for installation in electronic circuits.
It utilizes Split Gate cell technology, which enhances its operational capabilities.
This model belongs to the SST39SF040 series of flash memory devices.
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