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Microchip Split Gate 1 MB Parallel Flash Memory 32-Pin PLCC SST39SF010A-70-4I-NHE
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Height | 2.84mm |
| Length | 14.05mm |
| Cell Type | Split Gate |
| Model | SST39SF010A-70-4I-NHE |
| Width | 349.25mm |
| Mount Type | Surface |
| Series | SST39SF010A |
| Maximum Operating Temperature | 85°C |
| Package Type | PLCC |
| Minimum Operating Temperature | -40°C |
| Memory size | 1MB |
| Interface Type | Parallel |
| Pin Count | 32 |
| Maximum Supply Voltage | 5.5V |
| Minimum Supply Voltage | 4.5V |
| Supply Current | 25mA |
| Organisation | 128K x 8 bit |
| Number of Bits per Word | 8 |
| Maximum Random Access Time | 70ns |
| Number of Words | 128k |
| Timing Type | Asynchronous |
| Chip-Erase Time | 70 ms (typical) |
| Microchip Split Gate 1 MB Parallel Flash Memory 32-Pin PLCCBrand | Microchip |
| Microchip 1MB Parallel Flash Memory 32-Pin PLCC, SST39SF010A-70-4C-NHEBrand | Microchip |
Key Features
- Operates within 4.5V to 5.5V supply voltage range.
- Supports asynchronous timing with read access time up to 70 ns.
- Designed for endurance with 100,000 read/write cycles typical.
- Features sector-erase capability with uniform 4 Kbyte sectors.
- Low power consumption with 25 mA supply current during operation.
- Operating temperature range from -40°C to 85°C ensures robust performance.
- Compatible with TTL I/O and follows JEDEC flash EEPROM standards.
- Chip-erase time is typically 70 ms with automatic internal VPP voltage generation.
Product Description
Microchip SST39SF010A-70-4I-NHE is a high-quality Split Gate Parallel Flash Memory with 1 MB storage capacity housed in a 32-pin PLCC package suitable for surface mounting. Operating on a supply voltage between 4.5 V and 5.5 V, this device offers asynchronous timing with read access times as quick as 70 ns.
Designed for industrial and commercial electronics applications, the memory device supports a wide temperature range from -40°C to 85°C, ensuring dependable performance under various environmental conditions.
The device belongs to the SST39SF010A series, providing endurance up to 100,000 typical read/write cycles. It supports sector-erase functionality with uniform 4 Kbyte sectors, allowing efficient data management and rewriting.
Power efficiency is a key feature, with active supply current measured at 25 mA. The chip-erase operation typically completes in 70 ms, featuring automatic internal VPP generation simplifying write timing requirements.
Microchip's flash memory complies with JEDEC standards for Flash EEPROM pinouts and command sets, ensuring compatibility with a wide range of electronic systems. The memory supports TTL I/O compatibility and includes end-of-write detection through toggle bit and data# polling mechanisms for enhanced reliability.
Operates at 4.5 - 5.5 V supply voltage with asynchronous timing. Endurance of 100,000 typical read/write cycles. Low active power consumption at 25 mA supply current. Sector erase capability with uniform 4 Kbyte sectors.
Read access time as fast as 70 ns. Operating temperature range from -40°C to 85°C. 32-pin PLCC package for surface mount applications. JEDEC standard compliant for Flash EEPROM interfaces.
This product is ideal for use in semiconductor manufacturing, industrial electronics, embedded systems, and memory storage solutions. Its compact PLCC form factor and reliable endurance make it suitable for applications demanding consistent performance and high data integrity.
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Frequently Asked Questions
The Microchip SST39SF010A-70-4I-NHE has a storage capacity of 1 MB.
It operates within a supply voltage range of 4.5V to 5.5V.
The maximum read access time is up to 70 ns.
This model is designed for endurance with up to 100,000 typical read/write cycles.
The chip-erase time is typically 70 ms, featuring automatic internal VPP voltage generation.
It operates within a temperature range from -40°C to 85°C.
This memory is housed in a 32-pin PLCC package suitable for surface mounting.
It supports a parallel interface type and is compatible with TTL I/O.
The dimensions are 14.05 mm in length, 3.49 mm in width, and 2.84 mm in height.
The supply current during operation is 25 mA.
It includes end-of-write detection through toggle bit and data# polling mechanisms for enhanced reliability.
This model is suitable for use in semiconductor manufacturing, industrial electronics, embedded systems, and memory storage solutions.
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