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Microchip Split Gate 4 MB Parallel Flash Memory 32-Pin PLCC SST39SF040-70-4I-NHE

Category Flash Memory Brand Microchip Condition New

Specifications

Country of Origin India
Brand Microchip
Height 2.84mm
Length 14.05mm
Cell Type Split Gate
Model SST39SF040-70-4I-NHE
Width 349.25mm
Mount Type Surface
Series SST39SF040
Maximum Operating Temperature 85°C
Package Type PLCC
Minimum Operating Temperature -40°C
Memory size 4MB
Interface Type Parallel
Pin Count 32
Maximum Supply Voltage 5.5V
Minimum Supply Voltage 4.5V
Supply Current 25mA
Organisation 512 k x 8 Bit
Number of Bits per Word 8
Maximum Random Access Time 70ns
Number of Words 512K
Timing Type Asynchronous
Chip-Erase Time 70 ms (typical)
Microchip Split Gate 4 MB Parallel Flash Memory 32-Pin PLCCBrand Microchip
Microchip 4Mbit Parallel Flash Memory 32-Pin PLCC, SST39SF040-70-4C-NHEBrand Microchip

Key Features

  • 4 MB flash memory with split gate cell technology.
  • Parallel interface for fast data access and programming.
  • 32-pin Plastic Leaded Chip Carrier (PLCC) package for surface mounting.
  • Operating voltage range from 4.5V to 5.5V.
  • Asynchronous timing type suitable for flexible memory access.
  • Operating temperature range of -40°C to 85°C ensures reliability in harsh environments.
  • Maximum random access time of 70 ns for quick data retrieval.
  • Low power consumption with 10 mA active and 30 μA standby current at 14 MHz.

Product Description

Microchip SST39SF040-70-4I-NHE is a 4 MB Split Gate Parallel Flash Memory device packaged in a 32-Pin PLCC suitable for embedded systems requiring robust, non-volatile storage.

This device features split gate cell architecture offering high endurance and reliable data retention combined with low power consumption characteristics. The parallel interface enables asynchronous data access with a maximum random access time of 70 ns, making it ideal for high-speed memory applications.

Operating at a supply voltage between 4.5V and 5.5V, the memory supports a wide temperature range from -40°C to +85°C, ensuring functionality in industrial and commercial environments.

With typical 100,000 program/erase cycles endurance and sector erase capability (4 Kbyte uniform sectors), the SST39SF040 supports efficient memory management. Byte program time is typically 14 μs, with chip erase completed in approximately 70 ms.

The PLCC 32-pin surface mount package offers a compact footprint for printed circuit board designs. The device is TTL I/O compatible and complies with JEDEC standard flash memory pinouts and command sets.

4 MB memory size with split gate technology and parallel interface. 32-pin PLCC package optimized for surface mount technology. Wide operating voltage and temperature range for diverse applications. Low power consumption with active and standby current profiles.

High endurance with 100,000 program/erase cycles and sector erase capability. Fast byte program and chip erase times for efficient programming. JEDEC compliant I/O and command compatibility facilitates easy integration.

This Microchip flash memory is suitable for industrial controls, instrumentation, automotive electronics, data storage applications, and other embedded systems requiring reliable, rewritable non-volatile memory.

Explore more products in the Flash Memory category on EnvMart for additional semiconductor memory solutions tailored to various application needs.

Microchip Split Gate 4 MB Parallel Flash Memory 32-Pin PLCC SST39SF040-70-4I-NHE
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Frequently Asked Questions

This model has a memory size of 4 MB.

The maximum random access time is 70 ns, allowing for quick data retrieval.

It operates within a voltage range of 4.5V to 5.5V.

The operating temperature range is from -40°C to +85°C, ensuring reliability in harsh environments.

It features a parallel interface for fast data access and programming.

This model is packaged in a 32-Pin Plastic Leaded Chip Carrier (PLCC) suitable for surface mounting.

It supports up to 100,000 program/erase cycles, providing high endurance.

The typical chip-erase time is approximately 70 ms.

The memory organization is 512 k x 8 bits.

The supply current is typically 25 mA during operation.

Yes, it is TTL I/O compatible and complies with JEDEC standard flash memory pinouts and command sets.

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